VNB20N07价格

参考价格:¥12.8830

型号:VNB20N0713TR 品牌:STMicroelectronics 备注:这里有VNB20N07多少钱,2026年最近7天走势,今日出价,今日竞价,VNB20N07批发/采购报价,VNB20N07行情走势销售排行榜,VNB20N07报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VNB20N07

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

VNB20N07

FULLY AUTOPROTECTED POWER MOSFET

文件:422.87 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

VNB20N07

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VNB20N07

OMNIFET:全自动保护功率MOSFET

STMICROELECTRONICS

意法半导体

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

文件:491.98 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

FULLY AUTOPROTECTED POWER MOSFET

文件:422.87 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP20N07 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

VNB20N07产品属性

  • 类型

    描述

  • 型号

    VNB20N07

  • 功能描述

    MOSFET N-Ch 70V 20A OmniFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-16 19:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
25+
TO-263
32360
ST/意法全新特价VNB20N07TR-E即刻询购立享优惠#长期有货
ST
1933+
TO-263
609
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
24+
OT263
7850
只做原装正品现货或订货假一赔十!
ST
22+
D2PAK
9000
原厂渠道,现货配单
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
23+
原厂封装
13528
振宏微原装正品,假一罚百
ST(意法)
25+
D2PAK
18798
原装正品现货,原厂订货,可支持含税原型号开票。
ST
25+23+
TO263
75583
绝对原装正品现货,全新深圳原装进口现货
ST
2025+
TO263
3587
全新原厂原装产品、公司现货销售
STMicroelectronics
25+
N/A
11580
正规渠道,免费送样。支持账期,BOM一站式配齐

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