位置：首页 > IC中文资料第88页 > VN3205N
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX |   | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：858.22 Kbytes Page：14 Pages | Microchip 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：858.22 Kbytes Page：14 Pages | Microchip 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：858.22 Kbytes Page：14 Pages | Microchip 微芯科技 | | ||
FHP3205 is a low-voltage high-current power MOS field effect transistor,widely used in power inverters Features 110A, 55V, RDS(on) = 8.0mΩ fast switching speed | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
FL MC 2000E (SM40) LC 文件：384.74 Kbytes Page：8 Pages | PhoenixPHOENIX CONTACT 菲尼克斯德国菲尼克斯电气集团 | | ||
WASHERS 文件：68.27 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HF-band Fan-Out 文件：384.69 Kbytes Page：1 Pages | DOW-KEY | | ||
Heyco® Original Series-35 Liquid Tight Cordgrips 文件：264.32 Kbytes Page：1 Pages | Heyco | |
VN3205N产品属性
- 类型
描述
- 型号
VN3205N
- 功能描述
MOSFET 50V 0.3Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP(美国微芯) |
2447 |
SOT-89-3 |
31500 |
2000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
SUPERTEX(超科) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
SUPERTEX |
22+ |
SOT-89 |
20000 |
公司只做原装 品质保证 |
|||
MICROCHIP/微芯 |
2406+ |
71260 |
诚信经营!进口原装!量大价优! |
||||
MICROCHIP/微芯 |
25+ |
SOT-89 |
20300 |
MICROCHIP/微芯原装特价VN3205N8即刻询购立享优惠#长期有货 |
|||
SUPERTEX |
24+ |
SOT89 |
10000 |
||||
NK/南科功率 |
2025+ |
SOT-89 |
986966 |
国产 |
|||
SUPERTEX |
18+ |
SOT-89 |
300000 |
原装正品 可含税交易 |
|||
MICROCHIP(美国微芯) |
24+ |
SOT-89-3 |
9203 |
支持大陆交货,美金交易。原装现货库存。 |
|||
SUPERTEX |
23+ |
SOT-89 |
50000 |
全新原装正品现货,支持订货 |
VN3205N规格书下载地址
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