电池叠片型PPTC PolySwitch器件

提供的信息被认为是准确可靠的。 但是，用户应当独立评估选择的每款产品是否适合自己的应用并进行测试。 Littelfuse产品并非为相关Littelfuse产品文件中明确说明的用途以外的其他用途而设计，也不应被用于这些用途（包括但不限于军事、航空航天、医疗、救生、维生或核设施应用、用于手术植入体内的装置、或者在产品故障或运行无法达到理想状态的情况下会造成人身伤害、死亡或财产损失的任何其他应用）。 如果将产品用于相关Littelfuse文件中未明确说明的任何其他用途，则产品不享受Littelfuse质保。 如果将产品用于相关Littelfuse文件中未明确说明的其他用途，则Littelfuse不会 • 符合RoHS标准\n• 所有设备均可提供无铅型号。\n• 额定电流1.1A至13A不等\n• 快速跳闸时间;

电池叠片型PPTC PolySwitch器件

提供的信息被认为是准确可靠的。 但是，用户应当独立评估选择的每款产品是否适合自己的应用并进行测试。 Littelfuse产品并非为相关Littelfuse产品文件中明确说明的用途以外的其他用途而设计，也不应被用于这些用途（包括但不限于军事、航空航天、医疗、救生、维生或核设施应用、用于手术植入体内的装置、或者在产品故障或运行无法达到理想状态的情况下会造成人身伤害、死亡或财产损失的任何其他应用）。 如果将产品用于相关Littelfuse文件中未明确说明的任何其他用途，则产品不享受Littelfuse质保。 如果将产品用于相关Littelfuse文件中未明确说明的其他用途，则Littelfuse不会 • 符合RoHS标准\n• 所有设备均可提供无铅型号。\n• 额定电流1.1A至13A不等\n• 快速跳闸时间;

PolySwitch짰PTC Devices

PolySwitch™ Resettable Device Short Form Catalog PolySwitch Resettable Device Benefits: • Reduced warranty and service costs • Increased reliability • Superior shock and vibration withstand • Wide variety of applications Features: • Remotely resettable • Testable • Solid-state • Variety

PolySwitch??Resettable Device Short Form Catalog

文件：570.58 Kbytes Page：18 Pages

POLYSWITCH RESETTABLE DEVICES Strap Battery Devices

文件：619.44 Kbytes Page：14 Pages

PolySwitch Resettable Devices Strap Battery Devices

文件：218.19 Kbytes Page：16 Pages

PolySwitch??Resettable Device Short Form Catalog

文件：570.58 Kbytes Page：18 Pages

PolySwitch Resettable Devices Strap Battery Devices

文件：218.19 Kbytes Page：16 Pages

POLYSWITCH RESETTABLE DEVICES Strap Battery Devices

文件：619.44 Kbytes Page：14 Pages

封装/外壳：带 包装：卷带（TR）剪切带（CT） 描述：PTC RESET FUSE 12V 1.75A STRAP 电路保护 PTC 可复位保险丝

封装/外壳：带 包装：散装 描述：PTC RESET FUSE 12V 1.75A STRAP 电路保护 PTC 可复位保险丝

PolySwitch??Resettable Device Short Form Catalog

文件：570.58 Kbytes Page：18 Pages

PolySwitch Resettable Devices Strap Battery Devices

文件：218.19 Kbytes Page：16 Pages

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

L-Band PA DRIVER AMPLIFIER

DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: