位置：首页 > IC中文资料第8733页 > VKL9130
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VKL9130 | IOT Amplifier 文件：160.61 Kbytes Page：2 Pages | CPI |   | |
P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability | SAMSUNG 三星 | | ||
P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability | SAMSUNG 三星 | | ||
TC9130P 4CH INDEPENDENT CYCLIC TYPE TOUCH SWITCH
| TOSHIBA 东芝 | | ||
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS 文件：20.72 Kbytes Page：2 Pages | SEME-LAB | | ||
P-CHANNEL POWER MOSFET 文件：16.9 Kbytes Page：2 Pages | SEME-LAB | |
VKL9130产品属性
- 类型
描述
- 型号
VKL9130
- 制造商
CPI
- 制造商全称
CPI
- 功能描述
IOT Amplifier
VKL9130规格书下载地址
VKL9130参数引脚图相关
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