型号 功能描述 生产厂家 企业 LOGO 操作
VI30M120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

VishayVishay Siliconix

威世威世科技公司

VI30M120C

Low forward voltage drop, low power losses

文件:144.59 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

VI30M120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:143.23 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:143.23 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR) 描述:DIODE SCHOTTKY 30A 120V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:143.23 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

VishayVishay Siliconix

威世威世科技公司

Power Schottky rectifier

文件:167.64 Kbytes Page:8 Pages

STMICROELECTRONICS

意法半导体

Low forward voltage drop, low power losses

文件:144.59 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:105.26 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

更新时间:2025-12-29 15:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
25+
TO-262
2000
原厂原装,价格优势
VIS
24+
TO-262
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Vishay Semiconductor Diodes Di
22+
TO262AA
9000
原厂渠道,现货配单
Vishay General Semiconductor -
25+
TO-262-3 长引线 I?Pak TO-26
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VIS
22+
TO-262
20000
公司只做原装 品质保证
VISHAY/威世
2447
TO262
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
VISHAY/威世
24+
NA/
3296
原厂直销,现货供应,账期支持!
VIS
23+
TO-262
8560
受权代理!全新原装现货特价热卖!
VIS
25+23+
TO-262
14828
绝对原装正品全新进口深圳现货
VISHAY/威世
24+
TO-262
12000
原装正品真实现货杜绝虚假

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