位置：首页 > IC中文资料第4669页 > VI30120SG-E3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VI30120SG-E3 | Low forward voltage drop, low power losses High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
VI30120SG-E3 | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：DIODE SCHOTTKY 120V 30A TO262AA 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Low forward voltage drop, low power losses High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Low forward voltage drop, low power losses High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Low forward voltage drop, low power losses High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世科技威世科技半导体 | |
VI30120SG-E3产品属性
- 类型
描述
- 型号
VI30120SG-E3
- 功能描述
肖特基二极管与整流器 30 Amp 120 Volt Single TrenchMOS
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
TO-262 |
860000 |
明嘉莱只做原装正品现货 |
|||
VISHAYSEMICONDUCTORDIODESDIVIS |
23+ |
TO-262 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY/威世 |
24+ |
TO-262 |
12000 |
原装正品真实现货杜绝虚假 |
|||
24+ |
QFP |
178 |
|||||
Vishay Semiconductor Diodes Di |
22+ |
TO262AA |
9000 |
原厂渠道,现货配单 |
|||
Vishay General Semiconductor - |
25+ |
TO-262AA |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
25+ |
262 |
8880 |
原装认准芯泽盛世！ |
|||
Vishay Semiconductor Diodes Di |
23+ |
TO262AA |
9000 |
原装正品，支持实单 |
|||
VISHAY |
1809+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
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