型号 功能描述 生产厂家 企业 LOGO 操作
VI20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B

VishayVishay Siliconix

威世威世科技公司

VI20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

VI20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:142.26 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

VI20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:160.88 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

VI20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:164.09 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

VI20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:124.67 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.45 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:160.88 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.45 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR) 描述:DIODE SCHOTTKY 20A 120V TO-262AA 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:142.26 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR) 描述:DIODE SCHOTTKY 20A 120V TO-262AA 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:142.26 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

1200 V αSiC Silicon Carbide Schottky Barrier Diode

Features • Proprietary αSiC Schottky Barrier Diode technology • Negligible reverse recovery current • Maximum operating junction temperature of 175°C • Improved switching losses vs. Si bipolar diodes • Positive temperature coefficient for ease of paralleling Applications Renewable Industr

AOSMD

万国半导体

LOW VF SCHOTTKY RECTIFIER

文件:52.63 Kbytes Page:2 Pages

PANJIT

強茂

LOW VF SCHOTTKY RECTIFIER

文件:71.1 Kbytes Page:4 Pages

PANJIT

強茂

Ultra low forward voltage drop, low power loss

文件:98.01 Kbytes Page:4 Pages

PANJIT

強茂

Ultra low forward voltage drop, low power loss

文件:67.95 Kbytes Page:4 Pages

PANJIT

強茂

VI20120SG产品属性

  • 类型

    描述

  • 型号

    VI20120SG

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

更新时间:2025-12-26 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
24+
NA/
3300
原厂直销,现货供应,账期支持!
VISHAY
07+
TO-262
50
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VICOR
23+
模块
900
全新原装正品,量大可订货!可开17%增值票!价格优势!
VISHAY原装
25+23+
TO-262
24164
绝对原装正品全新进口深圳现货
VICOR
23+
MODULE
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY
25+
TO-262
1750
原厂原装,价格优势
VICOR
24+
12V-12V-75W
6868
原装现货,可开13%税票
Vishay Semiconductor Diodes Di
22+
TO262AA
9000
原厂渠道,现货配单
VISHAY原装
24+
TO-262
30980
原装现货/放心购买
VISHAY
23+
TO-262
8560
受权代理!全新原装现货特价热卖!

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