Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC a

Trench MOS Barrier Schottky Rectifier

文件：75.75 Kbytes Page：4 Pages

Low forward voltage drop, low power losses

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Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

封装/外壳：TO-220-2 全封装，隔离接片 包装：卷带（TR） 描述：DIODE SCHOTTKY 7.5A 60V ITO-220A 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-220-2 全封装，隔离接片 包装：卷带（TR） 描述：DIODE SCHOTTKY 7.5A 60V ITO-220A 分立半导体产品 二极管 - 整流器 - 单

Trench MOS Barrier Schottky Rectifier

文件：78.57 Kbytes Page：4 Pages

STATIC SEALS

DESCRIPTION The BECA 760 is a symmetrical dynamic and static facial effect U-seal, made from PTFE (different filling options) with lips that are pre-stressed by a spring. Derived from the BECA 760 profile, the BECA 769 profile is made specially for food industry applications. The V-spring

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