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VFT6045C价格

参考价格:¥8.4407

型号:VFT6045CBP-M3/4W 品牌:Vishay 备注:这里有VFT6045C多少钱,2026年最近7天走势,今日出价,今日竞价,VFT6045C批发/采购报价,VFT6045C行情走势销售排行榜,VFT6045C报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VFT6045C

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:74.25 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:81.86 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:83.43 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:83.43 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:83.8 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:81.86 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTTKY 45V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Trench MOS Barrier Schottky Rectifier

文件:83.43 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:81.86 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:80.61 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE SCHOTTKY 60A 45V ITO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:79.16 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

MOTOROLA

摩托罗拉

Industrial Silicon Rectifier, 60A

Features: • Low Leakage Current • Good Surge Capability up to 1000A • Availavle in Standard and Reverse Polarity

NTE

VFT6045C产品属性

  • 类型

    描述

  • 型号

    VFT6045C

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

更新时间:2026-8-1 19:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
/
TO-220
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY
25+23+
TO-220F
19717
绝对原装正品全新进口深圳现货
JINGDAO/晶导微
23+
SMC(DO-214AB)
69820
终端可以免费供样,支持BOM配单!
VISHAY/威世
25+
TO-220F
12000
原装正品真实现货杜绝虚假
VISHAY/威世
24+
TO-220F
47186
郑重承诺只做原装进口现货
VISHAY
17+
TO220F-3
6200
VISHAY/威世
26+
SMD
8635
一级代理优势现货,全新正品直营店
VISHAY
26+
SOT-23
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
22+
TO-220F
20000
只做原装
Vishay Semiconductor Diodes Di
22+
ITO220AB
9000
原厂渠道,现货配单

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