VFT6045CBP价格

参考价格:¥8.4407

型号:VFT6045CBP-M3/4W 品牌:Vishay 备注:这里有VFT6045CBP多少钱,2025年最近7天走势,今日出价,今日竞价,VFT6045CBP批发/采购报价,VFT6045CBP行情走势销售排行榜,VFT6045CBP报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VFT6045CBP

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

VishayVishay Siliconix

威世威世科技公司

VFT6045CBP

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:81.86 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

VFT6045CBP

Trench MOS Barrier Schottky Rectifier

文件:83.43 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

VFT6045CBP

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:83.43 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:83.8 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:81.86 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTTKY 45V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Trench MOS Barrier Schottky Rectifier

文件:83.43 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:81.86 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES

文件:40.48 Kbytes Page:1 Pages

MICRONETICS

微盟电子

VFT6045CBP产品属性

  • 类型

    描述

  • 型号

    VFT6045CBP

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

更新时间:2025-12-27 15:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VF
24+
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
VISHAY(威世)
24+
TO220F
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
Vishay Semiconductor Diodes Di
22+
ITO220AB
9000
原厂渠道,现货配单
XPPower
24+
NA
1097
进口原装正品优势供应
ST
25+
2500
16900
原装,请咨询
XP Power
24+
N/A
12000
一级代理保证进口原装正品假一罚十价格合理
ST
22+
2500
16900
支持样品,原装现货,提供技术支持!
ST
2511
2500
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
VISHAY/威世
23+
ITO-220AB
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
65000
一级代理-主营优势-实惠价格-不悔选择

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