VF401价格

参考价格:¥18.6278

型号:VF401 品牌:Honeywell 备注:这里有VF401多少钱,2025年最近7天走势,今日出价,今日竞价,VF401批发/采购报价,VF401行情走势销售排行榜,VF401报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VF401

2-Wire Solid State Switch

文件:616.79 Kbytes Page:5 Pages

Honeywell

霍尼韦尔

VF401

封装/外壳:径向 功能:专用型 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:MAGNETIC SWITCH SPEC PURP RADIAL 传感器,变送器 磁性传感器 - 开关(固态)

ETC

知名厂家

VF401

两线制 MR 环形磁微距传感器集成电路。扁平 TO-92 样式封装。增强灵敏度,典型值为 ±7 G。数字拉电流输出

Honeywell

霍尼韦尔

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICA

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICA

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

Powerpack MOS Schottky Barrier Rectifier

Features · Trench Mos Schottky Barrier · Guardring for overvoltage Protection · Low Forward Voltage Drop · Low Reverse Leakage Current · High Surge Current Capability · Plastic Material has UL Flammability Classification 94V-O

DAESAN

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:160.65 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:155.39 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A

文件:167.8 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:85.42 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 100V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A

文件:167.8 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A

文件:167.8 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

文件:167.61 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:161.52 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:151.39 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

文件:167.61 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.71 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

文件:167.61 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.71 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:78.36 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

文件:167.93 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:148.48 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:158.26 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:78.36 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:79.17 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

文件:167.93 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

文件:167.93 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:78.36 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.16 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:79.25 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

文件:168.66 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier5

文件:163.73 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:158.4 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:79.25 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Low forward voltage drop, low power losses

文件:157.16 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.73 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

文件:168.66 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:162.16 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier5

文件:163.73 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

文件:168.66 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.73 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:79.25 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

文件:597.06 Kbytes Page:3 Pages

MARATHON

Kapazit채t 20 Std (vorgegeben) 60Ah

文件:1.1342 Mbytes Page:2 Pages

GSYUASABATTERY

Premier Supplier of Electronic Hardware

文件:5.0379 Mbytes Page:60 Pages

ABBATRON

Low-ESR, Wide Temperature Grade The Ultimate in Cold Performance and ESR

文件:349.69 Kbytes Page:7 Pages

CDE

The Ultimate in Cold Performance and ESR

文件:504.79 Kbytes Page:8 Pages

CDE

VF401产品属性

  • 类型

    描述

  • 型号

    VF401

  • 功能描述

    板机接口移动感应器和位置传感器 2 Wire 3.8 Vdc to 24 Vdc

  • RoHS

  • 制造商

    Panasonic Electric Works

  • 封装/箱体

    TO-5

  • 感应距离

    3 m

  • 输出类型

    Digital

  • 电源电压-最大

    6 V

  • 电源电压-最小

    2.3 V

  • 最大工作温度

    + 60 C

  • 封装

    Bulk

更新时间:2025-10-18 18:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Honeywell
15+
TO92S-2
570
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Honeywell
24+
原厂原装
6000
进口原装正品假一赔十,货期7-10天
VISHAY/威世
24+
ROHS
990000
明嘉莱只做原装正品现货
VISHAY/威世
24+
210494
只做原厂渠道 可追溯货源
Vishay(威世)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
Honeywell
5
全新原装 货期两周
VISHAY
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
VISHAY
24+
TO-220
9800
郑重承诺只做原装进口现货
HONEYWELL
24+
42000
Vishay(威世)
23+
N/A
11800

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