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VF401价格
参考价格:¥18.6278
型号:VF401 品牌:Honeywell 备注:这里有VF401多少钱,2025年最近7天走势,今日出价,今日竞价,VF401批发/采购报价,VF401行情走势销售排行榜,VF401报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
VF401 | 2-Wire Solid State Switch 文件:616.79 Kbytes Page:5 Pages | Honeywell 霍尼韦尔 | ||
VF401 | 封装/外壳:径向 功能:专用型 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:MAGNETIC SWITCH SPEC PURP RADIAL 传感器,变送器 磁性传感器 - 开关(固态) | ETC 知名厂家 | ETC | |
VF401 | 两线制 MR 环形磁微距传感器集成电路。扁平 TO-92 样式封装。增强灵敏度,典型值为 ±7 G。数字拉电流输出 | Honeywell 霍尼韦尔 | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICA | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICA | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | |||
Powerpack MOS Schottky Barrier Rectifier Features · Trench Mos Schottky Barrier · Guardring for overvoltage Protection · Low Forward Voltage Drop · Low Reverse Leakage Current · High Surge Current Capability · Plastic Material has UL Flammability Classification 94V-O | DAESAN | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件:160.65 Kbytes Page:6 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件:155.39 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件:167.8 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:85.42 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | |||
封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 100V ITO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件:167.8 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件:167.8 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 文件:167.61 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件:161.52 Kbytes Page:6 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件:151.39 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 文件:167.61 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:163.71 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 文件:167.61 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:163.71 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:78.36 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件:167.93 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件:148.48 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件:158.26 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:78.36 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:79.17 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件:167.93 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件:167.93 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:78.36 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:162.16 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:79.25 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A 文件:168.66 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier5 文件:163.73 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件:158.4 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:79.25 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Low forward voltage drop, low power losses 文件:157.16 Kbytes Page:6 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:163.73 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A 文件:168.66 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:162.16 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier5 文件:163.73 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A 文件:168.66 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:163.73 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件:79.25 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch 文件:597.06 Kbytes Page:3 Pages | MARATHON | |||
Kapazit채t 20 Std (vorgegeben) 60Ah 文件:1.1342 Mbytes Page:2 Pages | GSYUASABATTERY | |||
Premier Supplier of Electronic Hardware 文件:5.0379 Mbytes Page:60 Pages | ABBATRON | |||
Low-ESR, Wide Temperature Grade The Ultimate in Cold Performance and ESR 文件:349.69 Kbytes Page:7 Pages | CDE | |||
The Ultimate in Cold Performance and ESR 文件:504.79 Kbytes Page:8 Pages | CDE |
VF401产品属性
- 类型
描述
- 型号
VF401
- 功能描述
板机接口移动感应器和位置传感器 2 Wire 3.8 Vdc to 24 Vdc
- RoHS
否
- 制造商
Panasonic Electric Works
- 封装/箱体
TO-5
- 感应距离
3 m
- 输出类型
Digital
- 电源电压-最大
6 V
- 电源电压-最小
2.3 V
- 最大工作温度
+ 60 C
- 封装
Bulk
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Honeywell |
15+ |
TO92S-2 |
570 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Honeywell |
24+ |
原厂原装 |
6000 |
进口原装正品假一赔十,货期7-10天 |
|||
VISHAY/威世 |
24+ |
ROHS |
990000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
24+ |
210494 |
只做原厂渠道 可追溯货源 |
||||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Honeywell |
新 |
5 |
全新原装 货期两周 |
||||
VISHAY |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
VISHAY |
24+ |
TO-220 |
9800 |
郑重承诺只做原装进口现货 |
|||
HONEYWELL |
24+ |
42000 |
|||||
Vishay(威世) |
23+ |
N/A |
11800 |
VF401规格书下载地址
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- VF30C60
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- VF25-7X
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- VF25-5
- VF25-25
- VF25-20
- VF20200C-E3/4W
- VF20150C-E3/4W
- VF20100SG-E3/4W
- VF20100C-E3/4W
- VF-18016-101
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