Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

文件：167.61 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：161.52 Kbytes Page：6 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：151.39 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.71 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

文件：167.61 Kbytes Page：5 Pages

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTTKY 100V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

肖特基二极管与整流器 40 Amp 100 Volt Dual TrenchMOS

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

文件：167.61 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.71 Kbytes Page：5 Pages

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE SCHOTTKY 40A 100V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER

DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas

32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER

DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas

32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER

DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas

32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER

DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas

1M x 40 Bit Dynamic Random Access Memory Module

1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications