位置：首页 > IC中文资料第11365页 > VF30120SG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VF30120SG | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世威世科技公司 |   | |
VF30120SG | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | | |
VF30120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.96 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VF30120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VF30120SG | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：158.13 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VF30120SG | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世威世科技公司 | | ||
Low forward voltage drop, low power losses High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.96 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：75.92 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE SCHOTTKY 120V 30A ITO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30A 120V ITO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.96 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
PRODUCT SPECIFICATION Cable/Wire stripperss | JOKARI | | ||
Schottky PowerMod ● Schottky Barrier Rectifier ● Guard Ring Protection ● Common Cathode Center Tap ● 300 Amperes/45 Volts ● 125°C Junction Temperature ● Reverse Energy Tested ● VRRM 20 - 45 Volts ● ROHS Compliant | Microsemi 美高森美 | | ||
PRODUCT SPECIFICATION 文件：395.81 Kbytes Page：6 Pages | JOKARI | | ||
BNC FEEDTHROUGH CONNECTORS 文件：341.09 Kbytes Page：2 Pages | CLIFF | | ||
0.3 Inch Single Digit SMD Display 文件：240.28 Kbytes Page：7 Pages | CHINASEMI | |
VF30120SG产品属性
- 类型
描述
- 型号
VF30120SG
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY |
0718+ |
TO220 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
17+ |
TO220 |
6200 |
100%原装正品现货 |
|||
VISHAY |
24+ |
TO220 |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY/威世 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
MICROCHIP |
24+ |
DIP |
8000 |
原装正品价格优势!欢迎询价QQ:385913858TEL:15 |
|||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
|||
VISHAY |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
JINGDAO/晶导微 |
23+ |
SOD-323 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
VISHAY |
24+ |
TO-220F |
5000 |
只做原装公司现货 |
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VF30120SG规格书下载地址
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DdatasheetPDF页码索引
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