VF20100S价格

参考价格:¥3.2599

型号:VF20100SG-E3/4W 品牌:Vishay 备注:这里有VF20100S多少钱,2025年最近7天走势,今日出价,今日竞价,VF20100S批发/采购报价,VF20100S行情走势销售排行榜,VF20100S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VF20100S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2

VishayVishay Siliconix

威世威世科技公司

VF20100S

High Voltage Trench MOS Barrier Schottky Rectifier

文件:152.41 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JES

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temp

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-22

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.71 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.71 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

文件:146.07 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

文件:156.99 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

文件:159.2 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:149.77 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR) 描述:DIODE SCHOTTKY 100V 20A ITO220AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

封装/外壳:TO-220-3 全封装,隔离接片 包装:带盒(TB) 描述:DIODE SCHOTTKY 100V 20A ITO220AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

文件:159.2 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:149.77 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

文件:159.2 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.446 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

文件:200.88 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

Capacitive Sensor

Features ■M30 × 1.5 threaded barrel ■Plastic, PA12‐GF30 ■Fine adjustment via potentiometer ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 ■SIL 2 (Low Demand Mode) acc. to IEC 61508, PL

TURCKTurck, Inc.

图尔克德国图尔克集团公司

PRODUCT SPECIFICATION

Cable/Wire stripperss

JOKARI

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration

ONSEMI

安森美半导体

ENGINEERS CUTTING TOOLS

文件:3.25271 Mbytes Page:24 Pages

PRESTO

INDUSTRIAL MICROWAVE GENERATORS 2450 MHZ

文件:240.25 Kbytes Page:4 Pages

MKS

VF20100S产品属性

  • 类型

    描述

  • 型号

    VF20100S

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

更新时间:2025-12-26 11:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
24+
TO220
7850
只做原装正品现货或订货假一赔十!
VISHAY
25+
TO220F
30000
代理全新原装现货,价格优势
VISHAY/威世
24+
NA/
3406
原厂直销,现货供应,账期支持!
VISHAY/威世
23+
ITO-220AB
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY原装
25+23+
TO-220F
23891
绝对原装正品全新进口深圳现货
VISHAY/威世
2023+
SMD
8635
一级代理优势现货,全新正品直营店
VISHAY/威世
2447
TO220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
22+
TO-220F
20000
只做原装
VISHAY/威世
23+
TO-220
50000
全新原装正品现货,支持订货
VISHAY
原厂封装
9800
原装进口公司现货假一赔百

VF20100S数据表相关新闻