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MBR20100CT价格
参考价格：￥1.1442
型号：MBR20100CT 品牌：MULTICOMP 备注：这里有MBR20100CT多少钱，2025年最近7天走势，今日出价，今日竞价，MBR20100CT批发/采购报价，MBR20100CT行情走势销售排行榜，MBR20100CT报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR20100CT | SWITCHMODE??PowerRectifiers SWITCHMODE™PowerRectifiers ...usingtheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate–of–the–artdeviceshavethefollowingfeatures: •20AmpsTotal(10AmpsPerDiodeLeg) •Guard–RingforStressProtection •LowForwardVoltage •150°COperatingJunctionTemper | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  |   |
MBR20100CT | 20AmpSchottkyBarrierRectifier20to100Volts Features •MeatlofSiliconRectifier,MajorityConducton •Guardringfortransientprotection •LowForwardVoltageDrop •HighCurrentCapability,HighEfficiency •LowPowerLoss | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | |
MBR20100CT | DualHigh-VoltageSchottkyRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervoltageprotection •Foruseinlowvoltage, | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
MBR20100CT | 20.0AMPS.SchottkyBarrierRectifiers Features ☆PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 ☆Metalsiliconjunction,majoritycarrierconduction ☆Lowpowerloss,highefficiency ☆Highcurrentcapability,lowforwardvoltagedrop ☆Highsurgecapability ☆Foruseinlowvoltage,highfrequency | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 |  | |
MBR20100CT | 20.0AMPS.SchottkyBarrierRectifiers FEATURES -Lowpowerloss,highefficiency -Guardringforovervoltageprotection -Highsurgecurrentcapability -ComplianttoRoHSDirective2011/65/EUandinaccordancetoWEEE2002/96/EC -Halogen-freeaccordingtoIEC61249-2-21definition | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | |
MBR20100CT | DUALSCHOTTKYRECTIFIERS VOLTAGERANGE:70-100VCURRENT:20A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 |  | |
MBR20100CT | WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 |  | |
MBR20100CT | WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | | |
MBR20100CT | DualCommon-CathodeHigh-VoltageSchottkyRectifier Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervoltageprotection •Foruseinlowvoltage, | VishayVishay Siliconix 威世科技威世科技半导体 | | |
MBR20100CT | SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE-30to150Volts FORWARDCURRENT-20.0Amperes FEATURES ●Metalofsiliconrectifier,majoritycarrierconduction ●Guardringfortransientprotection ●Lowpowerloss,highefficiency ●Highcurrentcapability,lowVF ●Highsurgecapacity ●PlasticpackagehasULflammab | HY HY ELECTRONIC CORP. |  | |
MBR20100CT | SWITCHMODE??PowerRectifiers ThisseriesusestheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate−of−the−artdeviceshavethefollowingfeatures: Features •20AmpsTotal(10AmpsPerDiodeLeg) •Guard−RingforStressProtection •LowForwardVoltage •150°COperatingJunctionTemperature •Epoxy | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MBR20100CT | DualHigh-VoltageSchottkyBarrierRectifiers FEATURES PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 Dualrectifierconstruction,positivecentertap Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Guardringforovervoltageprotection Forusein | SSC Silicon Standard Corp. |  | |
MBR20100CT | SCHOTTKYBARRIERTYPEDIODE SWITCHINGTYPEPOWERSUPPLYAPPLICATION. CONVERTER&CHOPPERAPPLICATION. FEATURES •AverageOutputRectifiedCurrent :IO=20A. •RepetitivePeakReverseVoltage :VRRM=100V. •FastReverseRecoveryTime:trr=35ns. | KECKEC CORPORATION KEC株式会社 |  | |
MBR20100CT | NCEMOSBarrierRectifier Description ThisSchottkyrectifierhasbeenoptimizedforlowreverseleakageathightemperature,thisproductspecialdesignforhighforwardandreversesurgecapability GeneralFeatures ●VRRM100V ●IF(AV)2x10A ●Highfrequencyoperation ●Lowforwardvoltagedrop ●Centertappac | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 |  | |
MBR20100CT | 20AMPERESSCHOTTKYBARRIERRECTIFIERS VOLTAGE40to200VoltCURRENT20Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. FlameRetardantEpoxyMoldingCompound. •Lowpowerloss,highefficiency. •Highcurrentcapability •Foruseinlowvoltage,highfrequencyinverters | PANJITPan Jit International Inc. 強茂強茂股份有限公司 |  | |
MBR20100CT | SchottkyBarrierRectifierReverseVoltage40to200VForwardCurrent20A SchottkyBarrierRectifier ReverseVoltage40to200V ForwardCurrent20A Features •LowPowerLoss，HighEfficiency •LowForwardVoltageDrop •HighCurrentCapability •RoHSLeadandbodyaccordingwithRoHSstandard | DACHANGRugao Dachang Electronics Co., Ltd 大昌电子如皋市大昌电子有限公司 |  | |
MBR20100CT | 20AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER Features •GuardRingDieConstructionfor TransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtectionApplications •L | DIODES Diodes Incorporated |  | |
MBR20100CT | 20Ampschottkybarrierrectifier20to100volts Features ●MeatlofSiliconRectifier,MajorityConducton ●Guardringfortransientprotection ●LowForwardVoltageDrop ●HighCurrentCapability,HighEfficiency ●LowPowerLoss | CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司 |  | |
MBR20100CT | SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaRefractorymetalcapableofhightemperatureoperationmetal.Theproprietarybarriertechnologyallowsforreliableoperationupto175℃junctiontemperature.TypicalapplicationareinswitchingModePowerSuppliessuchasadaptors,DC/DCconverters,f | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 |  | |
MBR20100CT | SCHOTTKYBARRIERRECTIFIERS SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE-20to200Volts FORWARDCURRENT-20.0Amperes FEATURES ●Metal-Semiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Forusein | CTC ctconline |  | |
MBR20100CT | PowerSchottkyRectifier-20Amp100Volt □Features -PlasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0 -HighJunctionTemperatureCapability -Lowforwardvoltage,highcurrentcapability -Highsurgecapacity -Lowpowerloss,highefficiency -ESDperformancehumanbodymode>8KV | SIRECTSirectifier Global Corp. 矽莱克半导体深圳市矽莱克半导体有限公司 |  | |
MBR20100CT | 20ASCHOTTKYBARRIERDIODEDualHighVoltageSchottkyRectifier 20ASCHOTTKYBARRIERDIODE DualHighVoltageSchottkyRectifier SpecificationFeatures: HighVoltageWideRangeSelection,100V,150V&200V HighSwitchingSpeedDevice LowForwardVoltageDrop LowPowerLossandHighEfficiency GuardRingforOver-voltageProtection | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌电子德昌电子（集团）有限公司 |  | |
MBR20100CT | SchottkyBarrierDiodeinaTO-220PlasticPackage Descriptions SchottkyBarrierDiodeinaTO-220PlasticPackage. Features Lowpowerloss,highefficiency. Applications Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | |
MBR20100CT | 20to100VoltsForwardCurrent- ReverseVoltage-20to100VoltsForwardCurrent-20.0Amperes FEATURES ♦TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ♦Constructionutilizesvoid-free moldedplastictechnique ♦Lowreverseleakage ♦Highforwardsurgecurrentcapability ♦ | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 辰达半导体深圳辰达半导体有限公司 |  | |
MBR20100CT | 20.0ASCHOTTKYBARRIERRECTIFIERS-40V-100V Features •MeatlofSiliconRectifier,MajorityConduction •Guardringfortransientprotection •LowForwardVoltageDrop •HighCurrentCapability,HighEfficiency •Marking:typenumber •Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG Halogenfreeproductforpa | PACELEADERPACELEADER INDUSTRIAL 霈峰霈峰实业有限公司 |  | |
MBR20100CT | SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to200Volts ForwardCurrent-20Amperes FEATURES PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Guardringforovervoltageprotection Lowpowerloss,highefficiency | GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd 星合电子山东星合明辉电子有限公司 |  | |
MBR20100CT | SCHOTTKYBARRIERRECTIFIER FEATURES •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtect | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. |  | |
MBR20100CT | SCHOTTKYBARRIERRECTIFIER REVERSEVOLTAGE:35to200VOLTS FORWARDCURRENT:20.0AMPERE FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassifications94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Foru | HORNBYNantong Hornby Electronic Co.,Ltd 南通康比电子南通康比电子有限公司 |  | |
MBR20100CT | SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE-35to200VoltsFORWARDCURRENT-20.0Amperes Features ◇PlasticmaterialusedcarriersUnderwritersLaboratoryClassification94V-0 ◇Metalsiliconjunction,majoritycarrierconduction ◇Lowpowerloss,highefficiency ◇Highcurrentcapability,lowforwardvoltagedrop ◇ | SHUNYEShanghai Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 |  | |
MBR20100CT | 20AmpSchottkyBarrierRectifier20to100Volts Features •MeatlofSiliconRectifier,MajorityConducton •Guardringfortransientprotection •LowForwardVoltageDrop •HighCurrentCapability,HighEfficiency •LowPowerLoss | KERSEMI Kersemi Electronic Co., Ltd. |  | |
MBR20100CT | 20AmpSchottkyBarrierRectifier20to100Volts Features •MeatlofSiliconRectifier,MajorityConducton •Guardringfortransientprotection •LowForwardVoltageDrop •HighCurrentCapability,HighEfficiency •LowPowerLoss | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR20100CT | SWITCHMODEPowerRectifiers SWITCHMODEPowerRectifiers ThisseriesusestheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate−of−the−artdeviceshavethefollowingfeatures: Features •20ATotal(10APerDiodeLeg) •Guard−RingforStressProtection •LowForwardVoltage •175°COperatingJunctio | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR20100CT | REVERSEVOLTAGE40to200VoltsRORWARDCURRENT20.0Amperes SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE40to200VoltsRORWARDCURRENT20.0Amperes | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | |
MBR20100CT | SCHOTTKYRECTIFIERS VOLTAGE20~200VoltsCURRENT20Ampers FEATURES •Powerpack •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability,lowforwardvoltagedrop •Highforwardsurgecapab | NIUHANGDongguan City Niuhang Electronics Co.LTD 纽航电子广东纽航电子科技有限公司 |  | |
MBR20100CT | SCHOTTKYDiodes ■Features ●Highsurgeforwardcurrentcapability ●LowPowerloss,Highefficiency ●Io20.0A ●VRRM90-200V ■Applications ●Highspeedswitching | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 |  | |
MBR20100CT | 20AmpSchottkyBarrierRectifier20to100Volts SWITCHMODE™PowerRectifiers ...usingtheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate–of–the–artdeviceshavethefollowingfeatures: •20AmpsTotal(10AmpsPerDiodeLeg) •Guard–RingforStressProtection •LowForwardVoltage •150°COperatingJunctionTemper | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR20100CT | 20ASchottkyBarrierRectifier FEATURE •Highcurrentcapability •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Highsurgecapability •HighESDcapability •Hightemperaturesolderingguaranteed:260°C/10s/0.25(6.35mm)fromcase TYPICALAPPLICATIONS Foruseinlowvoltage,highfrequencyrectifierof | CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重庆平伟实业重庆平伟实业股份有限公司 |  | |
MBR20100CT | 20.0AMP.SchottkyBarrierRectifiers Features ◇PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 ◇Metalsiliconjunction,majoritycarrierconduction ◇Lowpowerloss,highefficiency ◇Highcurrentcapability,lowforwardvoltagedrop ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequency | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
MBR20100CT | TrenchMOSSchottkytechnology Features ·LowPowerLoss ·HighEfficiency ·LowForwardVoltage,HighCurrentCapability ·Highsurgecapacity ·Case:ITO-220ABFullMoldedPlasticPackage | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR20100CT | SWITCHMODE??PowerRectifiers ThisseriesusestheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate−of−the−artdeviceshavethefollowingfeatures: Features •20AmpsTotal(10AmpsPerDiodeLeg) •Guard−RingforStressProtection •LowForwardVoltage •150°COperatingJunctionTemperature •Epoxy | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MBR20100CT | 20.0ASCHOTTKYBARRIERDIODE Features ●SchottkyBarrierChip ●IdeallySuitedforAutomaticAssembly ●LowPowerLoss,HighEfficiency ●ForUseinLowVoltageApplication ●GuardRingDieConstruction ●PlasticCaseMaterialhasULFlammabilityClassificationRating94V-O | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 |  | |
MBR20100CT | SCHOTTKYBARRIERRECTIFIER SCHOTTKYBARRIERRECTIFIER FEATURES ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | |
MBR20100CT | 20AmpSchottkyBarrierRectifier20to100Volts Features •MeatlofSiliconRectifier,MajorityConducton •Guardringfortransientprotection •LowForwardVoltageDrop •HighCurrentCapability,HighEfficiency •LowPowerLoss | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR20100CT | DUALSCHOTTKYRECTIFIERS FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guardringforovervoltageprotection. | DSK Diode Semiconductor Korea |  | |
MBR20100CT | DualCommonCathodeHigh-VoltageSchottkyRectifier, DESCRIPTION TheMBR20100CTSchottkyrectifierhasbeenoptimizedforlowreverseleakageathightemperature.Theproprietarybarriertechnologyallowsforreliableoperationupto150°Cjunctiontemperature. FEATURES ●150°CTJoperation ●Highfrequencyoperation ●Lowforwardvoltagedrop | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 |  | |
MBR20100CT | SCHOTTKYBARRIERRECTIFIERS ReverseVoltage-100VForwardCurrent-20A FEATURES ♦Lowforwardvoltage ♦Highcurrentcapability ♦Highforwardsurgecapability ♦Lowpowerlosses，Highefficiency ♦Guardingforovervoltageprotection ♦LeadfreeincomplywithEURoHS2011/65/EUdirectives MECHANICALDATA ♦Cas | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | |
MBR20100CT | SCHOTTKYRECTIFIER Features: •150°CTJoperation •Centertapconfiguration •Lowforwardvoltagedrop •Highpurity,hightemperatureepoxyencapsulationforenhanced mechanicalstrengthandmoistureresistance •Highfrequencyoperation •Guardringforenhancedruggednessandlongtermreliability • | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 |  | |
MBR20100CT | SCHOTTKYBARRIERRECTIFIERS ReverseVoltage-40to200VForwardCurrent-20A FEATURES •Highcurrentcapability •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Highsurgecapability •Hightemperaturesolderingguaranteed •Mountingposition:any Mechanicaldata •Case:TO-220AB •pprox.Weight: | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 |  | |
MBR20100CT | SchottkyBarrierRectifier FEATURES •Guard-RingforStressProtection •LowForwardVoltage •HighOperatingJunctionTemperature •GuaranteedReverseAvalanche •LowPowerLoss/HighEfficiency •Highsurgecapability •LowStoredChargeMajorityCarrierConduction •MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
MBR20100CT | SWITCHMODEPOWERRECTIFIERS SWITCHMODE™PowerRectifiers ...usingtheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate–of–the–artdeviceshavethefollowingfeatures: •20AmpsTotal(10AmpsPerDiodeLeg) •Guard–RingforStressProtection •LowForwardVoltage •150°COperatingJunctionTemper | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR20100CT | 20ASchottkyBarrierRectifiers FEATURES •Metalofsiliconrectifier,majoritycarrierconducton •Guardringfortransientprotection •Lowpowerloss,highefficiency •Highcurrentcapability,lowVF •Highsurgecapacity •PlasticpackagehasULflammability classification94V-0 MECHANICALDATA •Case:TO-220mol | MORESEMIMORE Semiconductor Company Limited 摩矽半导体摩矽半导体有限公司 |  | |
MBR20100CT | DualHighVoltageSchottkyRectifier Features •LowForwardVoltageDrop •LowPowerLossandHighEfficiency •HighSurgeCapability •RohsCompliant •MatteTin(Sn)LeadFinish •TerminalLeadsSurfaceisCorrosionResistant andcanwithstandto260°C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
MBR20100CT | ProductSpecification Features ●PlasticpackagehasunderwritersLaboratory FlammabilityClassification94V-0 ●Dualrectifierconstruction，positivecentertap ●Metalofsiliconrectifier，majoritycarrierconduction ●Lowforwardvoltage，highefficiency ●Guardingforovervoltageprotection ●Forusein | Good-Ark GOOD-ARK Electronics |  | |
MBR20100CT | SchottkyBarrierRectifier Features ●PlasticpackagehasunderwritersLaboratory FlammabilityClassification94V-0 ●Dualrectifierconstruction，positivecentertap ●Metalofsiliconrectifier，majoritycarrierconduction ●Lowforwardvoltage，highefficiency ●Guardingforovervoltageprotection ●Forusein | Surge Surge Components |  | |
MBR20100CT | 20AmpSchottkyBarrierRectifier20to100Volts Features •MeatlofSiliconRectifier,MajorityConducton •Guardringfortransientprotection •LowForwardVoltageDrop •HighCurrentCapability,HighEfficiency •LowPowerLoss | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR20100CT | 20ASCHOTTKYRECTIFIERS 20ASCHOTTKYRECTIFIERS AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors |  | |
MBR20100CT | 20.0AMPS.SchottkyBarrierRectifiers Features ◇PlasticmaterialusedcarriersUnderwritersLaboratory Classification94V-0 ◇Metalsiliconjunction,majoritycarrierconduction ◇Lowpowerloss,highefficiency ◇Highcurrentcapability,lowforwardvoltagedrop ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequ | YIXINShenzhen Yixinwei Technology Co., Ltd. 壹芯微深圳市壹芯微科技有限公司 |  | |
MBR20100CT | MBR20100CTSCHOTTKYRECTIFIER Features 150CTJoperation Centertapconfiguration Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhanced mechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability ThisisaPb−Fr | SMCDIODESMC Diode Solutions Co. LTD 桑德斯微电子桑德斯微电子器件（南京）有限公司 |  | |
MBR20100CT | SchottkyDiodes FEATURES Highfrequencyoperation Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Guardringforenhancedruggednessandlongtermreliability Solderdip275°Cmax.7s,perJESD22-B106 | RFERFE international RFE国际公司RFE国际股份有限公司 |  | |
MBR20100CT | SchottkyDiodes Features ●Highfrequencyoperation ●Highpurity,hightemperatureepoxyencapsulationfor ◇nhancedmechanicalstrengthandmoistureresistance ●Guardringforenhancedruggednessandlongtermreliability ●Solderdip275°Cmax.7s,perJESD22-B106 TypicalApplications Typicala | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | |
MBR20100CT产品属性
- 类型
描述
- 型号
MBR20100CT
- 功能描述
肖特基二极管与整流器 20A 100V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
37048 |
全新原装正品/价格优惠/质量保障 |
|||
Vishay(威世) |
24+ |
标准封装 |
7548 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
ON |
24+ |
TO-220 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
台半 |
23+ |
TO-220 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
SMC Diode Solutions |
24+ |
TO-220-3 |
30000 |
二极管-分立半导体产品-原装正品 |
|||
MHCHXM |
2013 |
TO-220 |
20 |
全新原装 正品现货 |
|||
PANJIT |
25+ |
TO-220 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
ON(安森美) |
2023+ |
N/A |
4550 |
全新原装正品 |
|||
ON/安森美 |
24+ |
TO-220 |
32000 |
全新原装现货特价销售,欢迎来电查询 |
|||
ON(安森美) |
23+ |
9404 |
公司只做原装正品,假一赔十 |
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DdatasheetPDF页码索引
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