PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.75mm). • High allowable power dissi

PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications

200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge

[VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge

200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery )Time

200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time

1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time

1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time