PNP Epitaxial Planar Silicon Transistor

Features

• Adoption of MBIT process.

• High current capacitance.

• Low collector-to-emitter saturation voltage.

• High speed switching.

• Ultrasmall-sized package permitting applied sets to be made small and slim (0.75mm).

• High allowable power dissipation.

Applications

• Charge line switching, load switching, high speed switching.