型号 功能描述 生产厂家 企业 LOGO 操作
VBZM100N03

MOSFET

VBSEMI

微碧半导体

N-Channel Enhancement Mode Power MOSFET

Featurese 30V, 100A Rosow 3.88mQ@Ves = 10V (Typ) «Advanced Trench Technology + Provide Excellent Rosco and Low Gate Charge « Lead free product is acquired

TECHPUBLIC

台舟电子

Rectifier Diodes

FEATURES High density cell design for ultra low Rps(on) ® Excellent package for good heat dissipation Fully characterized Avalanche voltage and current ® Special process technology for high ESD capability Good stability and uniformity with high Eas Excellent package for good heat dissipation

EVVOSEMI

翊欧

30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

UMW

友台半导体

N-Channel 30-V (D-S) MOSFET

文件:1.62203 Mbytes Page:7 Pages

VBSEMI

微碧半导体

90A竊?0V N-CHANNEL MOSFET

文件:212.13 Kbytes Page:5 Pages

KIA

可易亚半导体

更新时间:2025-12-27 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBsemi(台湾微碧)
2447
TO-220AB
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
24+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择

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