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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VBT5200-E3 | Trench MOS Schottky technology FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE SCHOTTKY 5A 200V TO-263AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE SCHOTTKY 5A 200V TO-263AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
Trench MOS Schottky technology FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Trench MOS Schottky technology FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Trench MOS Schottky technology FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package | VishayVishay Siliconix 威世科技威世科技半导体 | |
VBT5200-E3产品属性
- 类型
描述
- 型号
VBT5200-E3
- 制造商
Vishay Semiconductors
- 功能描述
5A,200V,TRENCH SKY RECT.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
25+ |
TO263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
VISHAY/威世 |
24+ |
NA/ |
3264 |
原厂直销,现货供应,账期支持! |
|||
VISHAY/威世 |
24+ |
TO263 |
990000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
22+ |
TO263 |
12000 |
只做原装、原厂优势渠道、假一赔十 |
|||
VISHAY/威世 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Vishay Semiconductor Diodes Di |
23+ |
TO263AB |
8000 |
只做原装现货 |
|||
VISHAY(威世) |
24+ |
TO263 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
VIS |
TO-263AB |
22+ |
6000 |
十年配单,只做原装 |
|||
VISHAY/威世 |
24+ |
TO-263 |
60000 |
全新原装现货 |
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VBT5200-E3规格书下载地址
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DdatasheetPDF页码索引
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