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VBT3045C价格
参考价格：￥5.5314
型号：VBT3045CBP-E3/8W 品牌：Vishay 备注：这里有VBT3045C多少钱，2025年最近7天走势，今日出价，今日竞价，VBT3045C批发/采购报价，VBT3045C行情走势销售排行榜，VBT3045C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VBT3045C | Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter | ISC 无锡固电 |   | |
VBT3045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：75.91 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application | VishayVishay Siliconix 威世威世科技公司 | | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter | ISC 无锡固电 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please | VishayVishay Siliconix 威世威世科技公司 | | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter | ISC 无锡固电 | | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：88.83 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：90.07 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：90.07 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：85.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：88.83 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：92.66 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：92.66 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V TO263AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：88.83 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：90.07 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：90.07 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：88.83 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：92.95 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE SCHOTTKY 30A 45V TO-263AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：85.44 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Low forward voltage drop, low power losses 文件：91.18 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：81.45 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：89.96 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：82.79 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
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AQ3045 Series 0.35pF 30kV Bidirectional Discrete TVS 文件：603.68 Kbytes Page：4 Pages | Littelfuse 力特 | | ||
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VBT3045C产品属性
- 类型
描述
- 型号
VBT3045C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
1911+/1715+ |
TO-263AB |
4998 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
2223+ |
TO-263AB |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO263AB |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
24+ |
TO-263AB |
60000 |
全新原装现货 |
|||
VISHAY |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
TO-263AB |
100 |
原装现货 |
||||
VISHAY/威世 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY/威世 |
23+ |
TO-263AB |
50000 |
全新原装正品现货,支持订货 |
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VBT3045C规格书下载地址
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DdatasheetPDF页码索引
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