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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VBT10200C | TrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半导体 |  |   |
TrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
TrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106 (forTO-220AB,ITO-220ABandTO-262AApacka | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
TrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
TrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
TrenchMOSBarrierSchottkyRectifier 文件：151.68 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE ARRAY SCHOTTKY 200V TO263 分立半导体产品 二极管 - 整流器 - 阵列 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division |  | | |
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE SCHOTTKY 10A 200V TO-263AB 分立半导体产品 二极管 - 整流器 - 阵列 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | | | |
AvagoAveon20mmrange [carclo-optics] Avago20&26.5mmRange AvagoAveon20&26.5mmRange AvagoJade20&26.5mmRange AvagoMoonstone20&26.5mmRange | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | | |
DualChannel,12-Bit105MSPSIFSamplingA/DConverterwithAnalogInputSignalConditioning PRODUCTDESCRIPTION TheAD10200isafullchannelADCsolutionwithon-modulesignalconditioningforimproveddynamicperformanceandfullymatchedchannel-to-channelperformance.Themoduleincludestwowide-dynamicrangeADCs.EachADChasatransformercoupledfront-endoptimizedforDirect-I | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
MicastatDissipativeLaminate 文件：216.43 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | | |
NylonPCBSupports-ImperialSpacing 文件：122.75 Kbytes Page：1 Pages | HeycoHeyco. 海科海科(Heyco) |  | | |
A/DConverterwithAnalogInputSignalConditioning 文件：1.49693 Mbytes Page：20 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | |
VBT10200C产品属性
- 类型
描述
- 型号
VBT10200C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
TO-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
VISHAY-威世 |
24+25+/26+27+ |
TO-263-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
Vishay General Semiconductor - |
24+ |
TO-263-3,D2Pak(2 引线 + 接片 |
30000 |
二极管-分立半导体产品-原装正品 |
|||
Vishay |
23+ |
TO263AB |
33500 |
全新原装真实库存含13点增值税票! |
|||
VISHAY/威世 |
2021+ |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Vishay Semiconductor Diodes Di |
23+ |
TO263AB |
8000 |
只做原装现货 |
|||
VIS |
22+ |
TO-263AB |
25000 |
只做原装进口现货,专注配单 |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO263AB |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
23+ |
TO263AB |
10000 |
公司只做原装正品 |
|||
23+ |
N/A |
65700 |
一级代理放心采购 |
VBT10200C芯片相关品牌
VBT10200C规格书下载地址
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DdatasheetPDF页码索引
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