Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

Trench MOS Barrier Schottky Rectifier

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA packa

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

Trench MOS Barrier Schottky Rectifier

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封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE ARRAY SCHOTTKY 200V TO263 分立半导体产品 二极管 - 整流器 - 阵列

肖特基二极管与整流器 10A 200V TrenchMOS

肖特基二极管与整流器 10A 200V TrenchMOS

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE SCHOTTKY 10A 200V TO-263AB 分立半导体产品 二极管 - 整流器 - 阵列

Dual Channel, 12-Bit 105 MSPS IF Sampling A/D Converter with Analog Input Signal Conditioning

PRODUCT DESCRIPTION The AD10200 is a full channel ADC solution with on-module signal conditioning for improved dynamic performance and fully matched channel-to-channel performance. The module includes two wide-dynamic range ADCs. Each ADC has a transformer coupled front-end optimized for Direct-I

Dual Channel, 12-Bit 105 MSPS IF Sampling A/D Converter with Analog Input Signal Conditioning

PRODUCT DESCRIPTION The AD10200 is a full channel ADC solution with on-module signal conditioning for improved dynamic performance and fully matched channel-to-channel performance. The module includes two wide-dynamic range ADCs. Each ADC has a transformer coupled front-end optimized for Direct-I

Dual Channel, 12-Bit 105 MSPS IF Sampling A/D Converter with Analog Input Signal Conditioning

PRODUCT DESCRIPTION The AD10200 is a full channel ADC solution with on-module signal conditioning for improved dynamic performance and fully matched channel-to-channel performance. The module includes two wide-dynamic range ADCs. Each ADC has a transformer coupled front-end optimized for Direct-I

10.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

10 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200Volts

[LTO-DMS Semiconductor Corporatin] Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency