MBR10200CT价格

参考价格:¥1.1846

型号:MBR10200CT-LJ 品牌:Diodes Incorporated 备注:这里有MBR10200CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBR10200CT批发/采购报价,MBR10200CT行情走势销售排行榜,MBR10200CT报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MBR10200CT

10 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200Volts

[LTO-DMS Semiconductor Corporatin] Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency

ETCList of Unclassifed Manufacturers

未分类制造商

MBR10200CT

10.0 AMPS. Schottky Barrier Rectifiers

Voltage Range 30 to 200 Volts Current 10.0 Amperes Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High sur

TSC

台湾半导体

MBR10200CT

10.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

MBR10200CT

Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 10A

Reverse Voltage 40 to 200 V Forward Current 10A Features ·Low Power Loss, High Efficiency ·Low Forward Voltage Drop ·High Current Capability ·Lead and body according with RoHS standard

DACHANG

大昌电子

MBR10200CT

10A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier

Dual High Voltage Schottky Rectifier Specification Features: ■ High Voltage Wide Range Selection, 100V, 150V & 200V ■ High Switching Speed Device ■ Low Forward Voltage Drop ■ Low Power Loss and High Efficiency ■ Guard Ring for Over-voltage Protection ■ High Surge Capability ■ RoHS Comp

TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd

德昌电子德昌电子(集团)有限公司

MBR10200CT

10 AMPERES SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • Guardring for overvlotage

PANJIT

強茂

MBR10200CT

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

SIRECTIFIER

矽莱克电子

MBR10200CT

10 Amp High Voltage Power Schottky Barrier Rectifier 200 Volt

Features • High Junction Temperature Capability • Low Leakage Current • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Markin

MCC

美微科

MBR10200CT

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequen

CTC

ctconline

MBR10200CT

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

SY

顺烨电子

MBR10200CT

ITO-220AB

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque

LUGUANG

鲁光电子

MBR10200CT

SCHOTTKY RECTIFIERS

VOLTAGE 20~200 Volts CURRENT 10 Ampers FEATURES • Power pack • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,low forward voltage drop • High forward surge capability • High frequency

NIUHANG

纽航电子

MBR10200CT

SCHOTTKY BARRIER RECTIFIERS

Reverse Voltage - 40 to 200 V Forward Current - 10 A FEATURES • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed • Mounting position: any Mechanical data • Case: TO-220 • Approx. Weight:

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

MBR10200CT

REVERSE VOLTAGE 40 to 200 Volts RORWARD CURRENT 10.0 Amperes

FORMOSA

美丽微半导体

MBR10200CT

Schottky Barrier Rectifiers

Reverse Voltage 40 ~ 200 V Forward Current 10 A Features ● Low reverse leakage ● High forward surge capability ● High reliability ● Lead and body according with RoHS standard ● Green compound with suffix -F on Marking Mechanical Data ● Case: TO-220AB Molded plastic ● Epoxy: UL 94V-0 rate

LEIDITECH

雷卯电子

MBR10200CT

Schottky Diodes

Features ● High frequency operation ● Low forward voltage drop ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Ap

YANGJIE

扬州扬杰电子

MBR10200CT

10.0AMP. Schottky Barrier Rectifiers

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque

LUGUANG

鲁光电子

MBR10200CT

SCHOTTKY BARRIER RECTIFIER

REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 10.0 AMPERE FEATURES • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • For u

HORNBY

南通康比电子

MBR10200CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANG

三阳电子

MBR10200CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANG

三阳电子

MBR10200CT

Dual Schottky Barrier Rectifier Reverse Voltage 200 Volts , Forward Current 10A

Reverse Voltage 200 Volts , Forward Current 10A Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardring

FS

MBR10200CT

MBR10200CT SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Terminals finish:

SMCDIODE

桑德斯微电子

MBR10200CT

Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

RFERFE international

RFE国际公司RFE国际股份有限公司

MBR10200CT

Schottky Rectifier Diode

FEATURES ·Metal silicon junction,majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability,low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed APPLICATIONS ·Designed for low-voltage,high fre

ISC

无锡固电

MBR10200CT

10.0 AMP SCHOTTKY BARRIER RECTIFIERS

文件:635.3 Kbytes Page:2 Pages

BYTESONIC

松浩电子

MBR10200CT

10 Amp High Voltage Power Schottky Barrier Rectifier 200 Volt

文件:851.41 Kbytes Page:2 Pages

KERSEMI

MBR10200CT

10A Schottky Barrier Rectifiers

文件:692.86 Kbytes Page:2 Pages

MORESEMI

摩矽半导体

MBR10200CT

SCHOTTKY BARRIER RECTIFIER

文件:646.92 Kbytes Page:2 Pages

CHENDA

辰达半导体

MBR10200CT

Schottky Barrier Rectifier

文件:226.72 Kbytes Page:2 Pages

ISC

无锡固电

MBR10200CT

Product Specification

文件:323.19 Kbytes Page:6 Pages

Good-Ark

MBR10200CT

SCHOTTKY BARRIER RECTIFIER

文件:1.80151 Mbytes Page:3 Pages

JIANGSU

长电科技

MBR10200CT

Schottky Barrier Rectifier

文件:134.84 Kbytes Page:2 Pages

DACHANG

大昌电子

MBR10200CT

Power Schottky Rectifier - 10Amp 200Volt

文件:133.63 Kbytes Page:3 Pages

SIRECT

矽莱克半导体

MBR10200CT

High Tjm Low IRRM Schottky Barrier Diodes

文件:166.77 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

MBR10200CT

SCHOTTKY RECTIFIERS

文件:462.38 Kbytes Page:4 Pages

NIUHANG

纽航电子

MBR10200CT

Schottky Barrier Diode in a TO-220 Plastic Package

文件:886.4 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

MBR10200CT

SCHOTTKY BARRIER RECTIFIERS

文件:113.19 Kbytes Page:2 Pages

DSK

MBR10200CT

Schottky Barrier Rectifier

文件:69.65 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MBR10200CT

SCHOTTKY RECTIFIER

文件:140.37 Kbytes Page:5 Pages

SMCSangdest Microelectronic (Nanjing) Co., Ltd

烧结金属

MBR10200CT

SCHOTTKY BARRIER RECTIFIER

文件:907.38 Kbytes Page:4 Pages

YFWDIODE

佑风微电子

MBR10200CT

Low forward voltage drop

文件:606.73 Kbytes Page:3 Pages

Littelfuse

力特

MBR10200CT

Dual Common Cathode Schottky Rectifier

文件:201.82 Kbytes Page:4 Pages

TSC

台湾半导体

MBR10200CT

Schottky Barrier Rectifier

文件:363.24 Kbytes Page:5 Pages

Surge

MBR10200CT

封装/外壳:TO-220-3 包装:卷带(TR) 描述:DIODE ARRAY SCHOTTKY 200V TO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

MBR10200CT

10.0A SCHOTTKY BARRIER RECTIFIERS 200V

文件:362.2 Kbytes Page:2 Pages

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰实业有限公司

MBR10200CT

10.0 AMPS. Schottky Barrier Rectifiers

文件:169.78 Kbytes Page:2 Pages

TSC

台湾半导体

MBR10200CT

Schottky Barrier Rectifiers

文件:200.18 Kbytes Page:2 Pages

MOSPEC

统懋

MBR10200CT

10.0 AMPS. Schottky Barrier Rectifiers

文件:196.9 Kbytes Page:2 Pages

TSC

台湾半导体

MBR10200CT

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 200V TO220 分立半导体产品 二极管 - 整流器 - 阵列

SMCDIODE

桑德斯微电子

MBR10200CT

SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION

文件:35.28 Kbytes Page:2 Pages

KECKEC CORPORATION

KEC株式会社

SCHOTTKY BARRIER RECTIFIERS

Reverse Voltage - 40 to 200 V Forward Current - 10 A FEATURES • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed • Mounting position: any Mechanical data • Case: TO-220 • Approx. Weight:

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

MBR10200CTL SCHOTTKY RECTIFIER

Features 150 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − F

SMCDIODE

桑德斯微电子

Dual Common Cathode Schottky Rectifier

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

10 AMPERES SCHOTTKY BARRIER RECTIFIERS

文件:722.04 Kbytes Page:3 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:682.57 Kbytes Page:11 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:521.53 Kbytes Page:12 Pages

DIODES

美台半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:521.53 Kbytes Page:12 Pages

DIODES

美台半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:682.57 Kbytes Page:11 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:682.57 Kbytes Page:11 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:521.53 Kbytes Page:12 Pages

DIODES

美台半导体

MBR10200CT产品属性

  • 类型

    描述

  • 型号

    MBR10200CT

  • 功能描述

    肖特基二极管与整流器 10 Amp 200 Volt Dual

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-8-10 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
24+
NA/
2000
优势代理渠道,原装正品,可全系列订货开增值税票
YANGJIE(扬杰)
24+
TO220
8215
现货供应,当天可交货!免费送样,原厂技术支持!!!
ON/安森美
2023+
TO220AB
8635
全新原装正品,优势价格
ON/安森美
1926+
to-263
6852
只做原装正品现货!或订货假一赔十!
DIODES(美台)
2024+
NA
500000
诚信服务,绝对原装原盘
BCD
14+
TO-220
458
DIODES/美台
25+
SMD
518000
明嘉莱只做原装正品现货
ON原装特价
25+23+
T0-220
17653
绝对原装正品全新进口深圳现货
ON
25+
T0-220
4500
全新原装、诚信经营、公司现货销售!
BCD
24+
TO-220
458
只做原厂渠道 可追溯货源

MBR10200CT数据表相关新闻