位置：首页 > IC中文资料 > VBFB165R02
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VBFB165R02 | N-Channel650V(D-S)PowerMOSFET 文件：779.12 Kbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  |   |
N-Channel650V(D-S)SuperJunctionPowerMOSFET FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel650V(D-S)SuperJunctionPowerMOSFET FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：765.82 Kbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi(微碧) |
23+ |
TO251 |
5000 |
诚信服务，绝对原装原盘 |
|||
MINI |
三年内 |
1983 |
纳立只做原装正品13590203865 |
||||
Cinch |
22+ |
NA |
65 |
加我QQ或微信咨询更多详细信息, |
|||
MINI |
22+ |
9000 |
原装现货假一赔十 |
||||
VBSEMI台湾微碧 |
23+ |
TO251 |
22820 |
原装正品，支持实单 |
|||
VBSEMI-微碧 |
24+25+/26+27+ |
车规-场效应管 |
143788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
MINI-CIRCUITS |
2407+ |
30098 |
全新原装!仓库现货,大胆开价! |
||||
Mini-Circuits |
20+ |
FF1145 |
30 |
专业销售MINI电子元件,常年备有大量库存 |
|||
MINI-CIRCUITS |
7 |
||||||
VBsemi(台湾微碧) |
2112+ |
TO-251 |
105000 |
80个/管一级代理专营品牌!原装正品,优势现货,长期 |
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VBFB165R02规格书下载地址
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2020-9-22
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