Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：92.05 Kbytes Page：4 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：92.05 Kbytes Page：4 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE ARRAY SCHOTTKY 170V TO263 分立半导体产品 二极管 - 整流器 - 阵列

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：85.43 Kbytes Page：4 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：92.05 Kbytes Page：4 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：92.05 Kbytes Page：4 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：散装 描述：DIODE ARRAY SCHOTTKY 170V TO263 分立半导体产品 二极管 - 整流器 - 阵列

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tab Schottky rectifier suited for High Frequency Switched Mode Power Supplies. Packaged in TO-220AB, D2PAK and TO-247, these devices are intended for use to enhance the reliability of the application. FEATURES AND BENEFITS ■ High junction temperature capability ■ Low l

170 V power Schottky rectifier

Features • High junction temperature capability • Low leakage current • High voltage capabilities • Good trade-off between leakage current and forward voltage drop • Low thermal resistance • High frequency operation • Avalanche specification • ECOPACK®2 compliant for TO-220AB and TO-247, o

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tab Schottky rectifier suited for High Frequency Switched Mode Power Supplies. Packaged in TO-220AB, D2PAK and TO-247, these devices are intended for use to enhance the reliability of the application. FEATURES AND BENEFITS ■ High junction temperature capability ■ Low l

Schottky Barrier Rectifier

FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performa

Combiner/Dividers

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