Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS

170 V power Schottky rectifier

Features • High junction temperature capability • Low leakage current • High voltage capabilities • Good trade-off between leakage current and forward voltage drop • Low thermal resistance • High frequency operation • Avalanche specification • ECOPACK®2 compliant for TO-220AB and TO-247, o