High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

High Voltage Trench MOS Barrier Schottky Rectifier

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High Voltage Trench MOS Barrier Schottky Rectifier

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High-Voltage Trench MOS Barrier Schottky Rectifier

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High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 20A 100V TO-263AB 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 20A 100V TO-263AB 分立半导体产品 二极管 - 整流器 - 单

High-Voltage Trench MOS Barrier Schottky Rectifier

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High-Voltage Trench MOS Barrier Schottky Rectifier

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Capacitive Sensor

Features ■M30 × 1.5 threaded barrel ■Plastic, PA12‐GF30 ■Fine adjustment via potentiometer ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 ■SIL 2 (Low Demand Mode) acc. to IEC 61508, PL

PRODUCT SPECIFICATION

Cable/Wire stripperss

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration

ENGINEERS CUTTING TOOLS

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INDUSTRIAL MICROWAVE GENERATORS 2450 MHZ

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