| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
V6K100DU | High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definition | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
V6K100DU | High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier 文件：137.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definition | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 1.5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 1.5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 1.5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 1.5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier 文件：137.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier 文件：137.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：8-PowerTDFN 包装：卷带（TR） 描述：RECTIFIER BARRIER SCHOTTKY FP5X6 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
封装/外壳：8-PowerTDFN 包装：管件 描述：RECTIFIER BARRIER SCHOTTKY FP5X6 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier 文件：137.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier 文件：137.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY(威世) |
24+ |
FlatPAK(5x6) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
Vishay General Semiconductor - |
25+ |
8-PowerTDFN |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY |
1809+ |
PAK |
3675 |
就找我吧!--邀您体验愉快问购元件! |
V6K100DU规格书下载地址
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