位置：首页 > IC中文资料第12878页 > V53C16258SH
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V53C16258SH | HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH Description The V53C16258SH is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258SH offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 19ns. All inputs are TT | MOSEL 茂矽电子 |   | |
V53C16258SH | HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH | MOSEL 茂矽电子 | | |
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH Description The V53C16258SH is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258SH offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 19ns. All inputs are TT | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH Description The V53C16258SH is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258SH offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 19ns. All inputs are TT | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH | MOSEL 茂矽电子 | | ||
High performance 256K x 16 EDO page mode CMOS dynamic RAM with optional self refresh | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL | MOSEL 茂矽电子 | | ||
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH Description The V53C16258L is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The | MOSEL 茂矽电子 | |
V53C16258SH产品属性
- 类型
描述
- 型号
V53C16258SH
- 制造商
MOSEL
- 制造商全称
MOSEL
- 功能描述
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOSEL |
2407+ |
SOJ |
7750 |
原装现货!实单直说!特价! |
|||
VITELICCO |
24+ |
DIP |
22055 |
郑重承诺只做原装进口现货 |
|||
MOSEL |
2025+ |
TSOP-40 |
3550 |
全新原厂原装产品、公司现货销售 |
|||
VITELIC |
25+ |
DIP |
4897 |
绝对原装!现货热卖! |
|||
MVC |
24+ |
TSOP44 |
5040 |
||||
茂矽 |
2450+ |
SOJ40 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
茂矽 |
SOJ40 |
125000 |
一级代理原装正品,价格优势,长期供应! |
||||
MOSEL |
1997+ |
TSOP-40 |
302 |
原装现货海量库存欢迎咨询 |
|||
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||||
VD |
24+ |
SOJ-40 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
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V53C16258SH规格书下载地址
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类型 衬垫 形状 圆形 应用 通用 - 轴向，径向 材料 聚丙烯 颜色 - 特性 - 长度 - 宽度 - 高度 0.098（2.49mm） 直径 - 外部 0.362（9.20mm） 直径 - 内部 0.200（5.08mm）
2020-12-15
DdatasheetPDF页码索引
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