型号 功能描述 生产厂家 企业 LOGO 操作
V53C16258SH

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH

Description The V53C16258SH is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258SH offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 19ns. All inputs are TT

MOSEL

茂矽电子

V53C16258SH

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH

Description The V53C16258SH is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258SH offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 19ns. All inputs are TT

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH

Description The V53C16258SH is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258SH offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 19ns. All inputs are TT

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

MOSEL

茂矽电子

High performance 256K x 16 EDO page mode CMOS dynamic RAM with optional self refresh

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258L is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

MOSEL

茂矽电子

V53C16258SH产品属性

  • 类型

    描述

  • 型号

    V53C16258SH

  • 制造商

    MOSEL

  • 制造商全称

    MOSEL

  • 功能描述

    HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH

更新时间:2025-12-31 14:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
茂矽
SOJ40
125000
一级代理原装正品,价格优势,长期供应!
MVC
2023+
TSOP44
5215
进口原装现货
MOSEL
2407+
SOJ
7750
原装现货!实单直说!特价!
MVC
20+
TSOP44
2960
诚信交易大量库存现货
VITELICCO
24+
DIP
22055
郑重承诺只做原装进口现货
MOSEL
2025+
TSOP-40
3550
全新原厂原装产品、公司现货销售
MOSEL
23+
TSOP
7000
绝对全新原装!100%保质量特价!请放心订购!
MOSEL
22+
SOJ
20000
公司只做原装 品质保证
茂矽
2450+
SOJ40
9850
只做原装正品现货或订货假一赔十!
VD
24+
SOJ-40
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增

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