型号 功能描述 生产厂家 企业 LOGO 操作
V53C16258SH

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH

Description The V53C16258SH is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258SH offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 19ns. All inputs are TT

MOSEL

茂矽电子

V53C16258SH

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH

Description The V53C16258SH is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258SH offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 19ns. All inputs are TT

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH

Description The V53C16258SH is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258SH offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 19ns. All inputs are TT

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

MOSEL

茂矽电子

High performance 256K x 16 EDO page mode CMOS dynamic RAM with optional self refresh

MOSEL

茂矽电子

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

MOSEL

茂矽电子

HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258L is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

MOSEL

茂矽电子

V53C16258SH产品属性

  • 类型

    描述

  • 型号

    V53C16258SH

  • 制造商

    MOSEL

  • 制造商全称

    MOSEL

  • 功能描述

    HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH

更新时间:2025-12-31 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
茂矽
24+
NA/
4697
原装现货,当天可交货,原型号开票
茂矽
2016+
SOJ40
9000
只做原装,假一罚十,公司可开17%增值税发票!
茂矽
2450+
SOJ40
9850
只做原装正品现货或订货假一赔十!
MOSEL
22+
SOJ
20000
公司只做原装 品质保证
MOSEL
2025+
TSOP-40
3550
全新原厂原装产品、公司现货销售
MOSEL
23+
TSOP
7000
绝对全新原装!100%保质量特价!请放心订购!
MOSEL
2407+
SOJ
7750
原装现货!实单直说!特价!
25
全新原装 货期两周
VITELICCO
24+
DIP
22055
郑重承诺只做原装进口现货
MVC
24+
TSOP44
5040

V53C16258SH数据表相关新闻

  • V5.5MLA0603H

    V5.5MLA0603H,VARISTOR V5.5MLA 30A 0603

    2023-3-4
  • V8PA10-M3/I

    进口代理

    2022-9-22
  • V42254-B2240-M780

    V42254-B2240-M780

    2022-6-16
  • V60DM100C-M3/I

    V60DM100C-M3/I

    2021-11-26
  • V7-6B19D8

    V7-6B19D8,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.

    2021-2-9
  • V4555

    类型 衬垫 形状 圆形 应用 通用 - 轴向,径向 材料 聚丙烯 颜色 - 特性 - 长度 - 宽度 - 高度 0.098(2.49mm) 直径 - 外部 0.362(9.20mm) 直径 - 内部 0.200(5.08mm)

    2020-12-15