HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258L is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258L is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258L is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258L is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258L is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258L is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258L is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258L is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258L is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16258L offers Page mode with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH

Description The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL

HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH

Description The V53C16258SH is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258SH offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 19ns. All inputs are TT