Ideal for automated placement

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at IF = 5 A

• Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：管件 描述：DIODE SCHOTTKY 120V 6.3A TO263AC 分立半导体产品 二极管 - 整流器 - 单

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

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