| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V30DM100C | Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - | VishayVishay Siliconix 威世威世科技公司 |   | |
V30DM100C | Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：110.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
V30DM100C | Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.49 V at IF = 5.0 A | VishayVishay Siliconix 威世威世科技公司 | | |
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.49 V at IF = 5.0 A • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.49 V at IF = 5.0 A • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：110.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR） 描述：DIODE ARRAY SCHOTT 100V TO263AC 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：110.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTT 100V TO263AC 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-263 |
50000 |
只做原装正品 |
|||
Vishay |
23+ |
集成电路(IC) |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
VISHAY(威世) |
24+ |
TO-263 |
2317 |
特价优势库存质量保证稳定供货 |
|||
VISHAY(威世) |
24+ |
TO-263 |
6473 |
百分百原装正品,可原型号开票 |
|||
VISHAY/威世 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Vishay Semiconductor Diodes Di |
23+ |
TO263AC (SMPD) |
8000 |
只做原装现货 |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO263AC (SMPD) |
9000 |
原厂渠道,现货配单 |
|||
Vishay General Semiconductor - |
25+ |
TO-263-3 D?Pak(2 引线 + 凸片 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY/威世 |
24+ |
TO263 |
60000 |
V30DM100C规格书下载地址
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DdatasheetPDF页码索引
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