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V30100价格

参考价格：￥4.9262

型号：V30100C-E3/4W 品牌：Vishay 备注：这里有V30100多少钱，2025年最近7天走势，今日出价，今日竞价，V30100批发/采购报价，V30100行情走势销售排行榜，V30100报价。

型号	功能描述	生产厂家企业	LOGO
V30100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A Ultra Low VF= 0.455 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C-E3	Trench MOS Schottky technology Ultra Low VF = 0.455 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath t	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C-E3	Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A Ultra Low VF= 0.455 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C-E3_V01	Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C-E3SLASH4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A Ultra Low VF= 0.455 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100CI	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100CI_V01	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100CI-M3SLASHP	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 8 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPIC	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100PW	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 8 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100PW-M3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 8 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S_V01	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S-E3	High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S-E3/45	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S-E3_V01	High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S-E3SLASH45	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100SG	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100SG	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100SG_V01	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100SG-E3	High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100SG-E3	High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100SG-E3_V01	High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100SG-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.53 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.91 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C_11	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.91 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C_12	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.53 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C_15	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：165.17 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C_15	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：130.81 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C-E3	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.455 V at IF = 5 A	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.53 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C-E3_15	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：152.56 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C-E3SLASH4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.53 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100CHM3/4W	封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：DIODE SCHOTTKY 30A 100V TO-220AB 分立半导体产品二极管 - 整流器 - 阵列	ETC 知名厂家	ETC
V30100CHM3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.91 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100CI	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：136.09 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100CI	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100CI-M3/P	封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：30A 100V TRENCH SKY RECT 分立半导体产品二极管 - 整流器 - 阵列	ETC 知名厂家	ETC
V30100CI-M3/P	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：136.09 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C-M3	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100C-M3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.91 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100P_08	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 8 A 文件：103.9 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100P-E3/45	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 8 A 文件：103.9 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100P-E3SLASH45	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 8 A 文件：103.9 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100PW	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：77.36 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100PW-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：77.36 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100PW-M3_15	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：80.46 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100PW-M3_15	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：87.57 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.88 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.88 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S_09	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.88 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S_13	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.97 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S_15	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：135.6 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S_15	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.13 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S-E3	High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.46 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
V30100S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.97 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay

V30100产品属性

类型
描述
型号
V30100
制造商
Littelfuse

V30100供应商更多...

更新时间：2025-12-24 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	V30100PW	VISHAY/威世	24+	NA/	3414	原装现货,当天可交货,原型号开票	询价
深圳市纳艾斯科技有限公司	V30100P-E3/45	VISHAY	24+	TO247	8000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市科翼源电子有限公司	V30100P-E3/45	VISHAY	23+	TO-247	3500	原厂原装正品	询价
深圳市明嘉莱科技有限公司	V30100P	VISHAY/威世	25+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市诺美思科技有限公司	V30100PW	VISHAY		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市华斯顿科技有限公司	V30100P-E3/45	VISHAY	25+23+	TO-247	15293	绝对原装正品全新进口深圳现货	询价
深圳市河锋鑫科技有限公司	V30100PWM3/4W	Vishay Semiconductor Diodes Di	22+	TO3PW	9000	原厂渠道,现货配单	询价
深圳市华来深电子有限公司	V30100PW-M3/4W	VISHAY	23+	TO-247	8560	受权代理!全新原装现货特价热卖!	询价
深圳市创新迹电子有限公司	V30100PW	VISHAY	22+	TO-247	20000	公司只做原装品质保证	询价
深圳市宏捷佳电子科技有限公司	V30100P-E3/45	Vishay General Semiconductor -	25+	TO-3P-3 SC-65-3	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价

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DdatasheetPDF页码索引

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V30100价格

V30100产品属性

V30100供应商更多...

V30100芯片相关品牌

V30100规格书下载地址

V30100参数引脚图相关

V30100数据表相关新闻

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V375B5H200BL 电源模块 进口原装现货。

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V375A28C600A

DdatasheetPDF页码索引

V375B5H200BL 电源模块进口原装现货。