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V30100C价格
参考价格：￥4.9262
型号：V30100C-E3/4W 品牌：Vishay 备注：这里有V30100C多少钱，2025年最近7天走势，今日出价，今日竞价，V30100C批发/采购报价，V30100C行情走势销售排行榜，V30100C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V30100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A Ultra Low VF= 0.455 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive | VishayVishay Siliconix 威世威世科技公司 |   | |
V30100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
V30100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
V30100C | Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | |
Trench MOS Schottky technology Ultra Low VF = 0.455 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath t | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A Ultra Low VF= 0.455 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A Ultra Low VF= 0.455 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：165.17 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：130.81 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：152.56 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30A 100V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：136.09 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：30A 100V TRENCH SKY RECT 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：136.09 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
PRODUCT SPECIFICATION Cable/Wire stripperss | JOKARI | | ||
Up to 1000mA | LED Driver Up to 1000mA | LED Driver FEATURES: • Step Down DC/DC LED driver • Constant current output • Wide (4:1) input voltage range • High efficiency up to 95 • Operating Temperature range -40ºC to +85ºC • Open and Short LED Protection • PWM/Digital and Analog Voltage dimming | AIMTEC | | ||
Up to 1000mA | LED Driver Up to 1000mA | LED Driver FEATURES: • Wire Connections • Constant current output • Wide (4:1) input voltage range • High efficiency up to 95 • Step Down DC/DC LED driver • Operating Temperature range -40ºC to +85ºC • Open and Short LED Protection • PWM/Digital | AIMTEC | | ||
Up to 1000mA | LED Driver 文件：440.91 Kbytes Page：14 Pages | AIMTEC | | ||
Up to 1000mA | LED Driver 文件：353.85 Kbytes Page：14 Pages | AIMTEC | |
V30100C产品属性
- 类型
描述
- 型号
V30100C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
17+ |
TO220 |
6200 |
100%原装正品现货 |
|||
VISHAY/威世 |
2447 |
TO-220-3 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Vishay(威世) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
VISHAY/威世 |
25+ |
TO220 |
20300 |
VISHAY/威世原装特价V30100C-E3/4W即刻询购立享优惠#长期有货 |
|||
Vishay(威世) |
2511 |
N/A |
11800 |
电子元器件采购降本 30%!原厂直采,砍掉中间差价 |
|||
VISHAY |
25+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY/威世 |
17+ |
TO-220 |
80 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
V30100C规格书下载地址
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DdatasheetPDF页码索引
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