| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi | VishayVishay Siliconix 威世威世科技公司 |   | ||
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：73.06 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Schottky technology 文件：82.45 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-277，3-PowerDFN 包装：管件 描述：DIODE SCHOTTKY 60V 5.5A TO277A 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.25 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
Low forward voltage drop, low power losses 文件：89.73 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR）剪切带（CT） 描述：DIODE SCHOTTKY 60V 6.4A TO277A 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
6250 |
原厂直销,现货供应,账期支持! |
|||
VISHAY(威世) |
24+ |
TO277 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
VISHAY |
25+23+ |
TO277A(SMPC) |
30928 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
23+ |
TO-277A |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Vishay(威世) |
23+ |
N/A |
11800 |
||||
VISHAY/威世 |
24+ |
TO-277 |
98000 |
原装现货假一罚十 |
|||
VISHAY/威世 |
22+ |
TO-277A(SMPC) |
20000 |
原装正品 假一赔十! |
|||
LITTELFUSE/力特 |
2447 |
PwrPAK |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY/威世 |
TO-277A(SMPC) |
6000 |
只做原装正品,卖元器件不赚钱交个朋友 |
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