Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Low forward voltage drop, low power losses

文件：98.18 Kbytes Page：4 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 5 A

封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE SCHOTTKY 10A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：86.87 Kbytes Page：4 Pages

120 V power Schottky rectifier

Features • High current capability • Avalanche rated • Low forward voltage drop • High frequency operation • ECOPACK®2 compliant

120 V power Schottky rectifier

Features • High current capability • Avalanche rated • Low forward voltage drop • High frequency operation • ECOPACK®2 compliant

120 V power Schottky rectifier

Features • High current capability • Avalanche rated • Low forward voltage drop • High frequency operation • ECOPACK®2 compliant

120 V power Schottky rectifier

Features • High current capability • Avalanche rated • Low forward voltage drop • High frequency operation • ECOPACK®2 compliant

Power Schottky rectifier

文件：187.7 Kbytes Page：8 Pages