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V20200C价格
参考价格：￥5.0208
型号：V20200C-E3/4W 品牌：Vishay 备注：这里有V20200C多少钱，2025年最近7天走势，今日出价，今日竞价，V20200C批发/采购报价，V20200C行情走势销售排行榜，V20200C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V20200C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A Ultra Low VF = 0.60 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te | VishayVishay Siliconix 威世威世科技公司 |   | |
V20200C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.99 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
V20200C | Dual High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世威世科技公司 | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Schottky technology Ultra Low VF = 0.60 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A Ultra Low VF = 0.60 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A Ultra Low VF = 0.60 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.99 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：147.86 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：157.42 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 200V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
肖特基二极管与整流器 20 Amp 200 Volt Dual TrenchMOS | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.99 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | ONSEMI 安森美半导体 | | ||
Fast Recovery Rectifier 文件：258.32 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
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Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor 文件：50.48 Kbytes Page：3 Pages | BITECH | | ||
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V20200C产品属性
- 类型
描述
- 型号
V20200C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
09+ |
TO-220 |
37 |
||||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
VISHAY/威世 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY/威世 |
25+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
VIS |
25+23+ |
TO-220 |
14878 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
22+ |
TO-220 |
9000 |
原装正品,支持实单! |
|||
VISHAY |
23+ |
TO-220 |
5000 |
正规渠道,只有原装! |
|||
VISHAY |
24+ |
TO-220 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
VISHAY |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
|||
VISHAY |
17+ |
TO220 |
6200 |
100%原装正品现货 |
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V20200C规格书下载地址
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V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31
DdatasheetPDF页码索引
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