| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V12P8HM3 | Low forward voltage drop, low power losses 文件：95.81 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 |   | |
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF = 6 A • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.42 V at IF = 6 A • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.42 V at IF = 6 A • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF = 6 A • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：105.12 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：106.3 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR） 描述：DIODE SCHOTTKY 80V 12A TO277A 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：105.12 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：106.3 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR） 描述：DIODE SCHOTTKY 80V 12A TO277A 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
TO-277 |
98000 |
原装现货假一罚十 |
|||
VISHAY(威世) |
24+ |
TO277 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
VISHAY |
25+23+ |
TO277A(SMPC) |
31509 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
23+ |
TO-277 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Vishay General Semiconductor - |
25+ |
TO-277A(SMPC) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VISHAY |
25+ |
TO-277 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
V12P8HM3规格书下载地址
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V12P8HM3数据表相关新闻
V23047-A1024-A511
V23047-A1024-A511
2023-4-7UZ1086G-SOT223R-AD-TG_UTC代理商
UZ1086G-SOT223R-AD-TG_UTC代理商
2023-3-14UXN40M7K
UXN40M7K
2021-10-20UXN40M7K
UXN40M7K
2021-10-20V15PM15-M3/H
V15PM15-M3/H
2020-11-20V23079-A1006-B201
V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31
DdatasheetPDF页码索引
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