V12P10价格

参考价格:¥2.5977

型号:V12P10HM3/86A 品牌:Vishay 备注:这里有V12P10多少钱,2026年最近7天走势,今日出价,今日竞价,V12P10批发/采购报价,V12P10行情走势销售排行榜,V12P10报价。
型号 功能描述 生产厂家 企业 LOGO 操作
V12P10

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automatic placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

VISHAYVishay Siliconix

威世威世科技公司

V12P10

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at IF = 5 A

VISHAYVishay Siliconix

威世威世科技公司

V12P10

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V12P10

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:92.17 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V12P10

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automatic placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

VISHAYVishay Siliconix

威世威世科技公司

ECP5 Versa Development Board User Guide

Features • Half-length PCI Express form-factor —Allows demonstration of PCI Express x1 interconnection • Electrical testing of one full-duplex SERDES channel via SMA connections • USB-B connection for UART and device programming • Two RJ45 interfaces to 10/100/1000 Ethernet to RGMII • On-bo

LATTICE

莱迪思

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:92.17 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:86.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:541.83 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.41 V at IF = 6 A

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-277,3-PowerDFN 包装:卷带(TR) 描述:DIODE SCHOTTKY 100V 12A TO277A 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-277,3-PowerDFN 包装:卷带(TR) 描述:DIODE SCHOTTKY 100V 12A TO277A 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:92.17 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:92.17 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:94.65 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:92.17 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:92.17 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:110.92 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM

Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate

MOTOROLA

摩托罗拉

V12P10产品属性

  • 类型

    描述

  • 型号

    V12P10

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

更新时间:2026-3-15 18:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
25+23+
TO277A(SMPC)
32049
绝对原装正品全新进口深圳现货
VISHAY/威世
22+
明嘉莱只做原装正品现货
2510000
TO-277A(SMPC)
VISHAY/威世
24+
TO277A
9370
自己现货价格优势
VISHAY
24+
N/A
8000
全新原装正品,现货销售
Vishay/GeneralSemiconduc
24+
SMPC
7500
VISHAY
16+
TO-277A(SMPC)
10300
进口原装现货/价格优势!
VISHAY/威世
25+
TO-277A(SMPC)
48204
VISHAY/威世全新特价V12P10-M3/86A即刻询购立享优惠#长期有货
Vishay(威世)
2511
N/A
11800
电子元器件采购降本 30%!原厂直采,砍掉中间差价
VISHAY
15+
原厂原装
6000
进口原装现货假一赔十
VISHAY
2021+
TO277
16800
全新原装正品,自家优势现货

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