100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

功率 MOSFET，P 沟道，QFET®，-100 V，-11.5 A，290 mΩ，TO-220

这些 P 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。 这一先进技术是专为最大限度地降低通态电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。 这些器件非常适合音频放大器、高效开关DC/DC转换器以及DC电机控制等低压应用。 •-11.5 A、-100 V、RDS(on) = 290 mΩ（最大值）@ VGS = -10 V、ID = -5.75 A\n•低栅极电荷（典型值 21 nC)\n•低 Crss（典型值 65 pF)\n•100% 经过雪崩击穿测试\n•175℃ 最大结温额定值;

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM

Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate