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V10P45价格
参考价格：￥1.8992
型号：V10P45-M3/86A 品牌：Vishay 备注：这里有V10P45多少钱，2025年最近7天走势，今日出价，今日竞价，V10P45批发/采购报价，V10P45行情走势销售排行榜，V10P45报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V10P45 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op | VishayVishay Siliconix 威世威世科技公司 |   | |
V10P45 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op | VishayVishay Siliconix 威世威世科技公司 | | |
V10P45 | High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - | VishayVishay Siliconix 威世威世科技公司 | | |
V10P45 | High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.34 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | |
High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op | VishayVishay Siliconix 威世威世科技公司 | | ||
SMD Photovoltaic Solar Cell Protection Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/9 | VishayVishay Siliconix 威世威世科技公司 | | ||
Low forward voltage drop, low power losses FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/9 | VishayVishay Siliconix 威世威世科技公司 | | ||
SMD Photovoltaic Solar Cell Protection TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi | VishayVishay Siliconix 威世威世科技公司 | | ||
SMD Photovoltaic Solar Cell Protection TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi | VishayVishay Siliconix 威世威世科技公司 | | ||
SMD Photovoltaic Solar Cell Protection Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/9 | VishayVishay Siliconix 威世威世科技公司 | | ||
SMD Photovoltaic Solar Cell Protection Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/9 | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR） 描述：DIODE SCHOTTKY 45V 10A TO277A 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 45V 4.4A TO277A 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：84.39 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
SMD Photovoltaic Solar Cell Protection Schottky Rectifier 文件：86.82 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
SMD Photovoltaic Solar Cell Protection TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.34 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
SMD Photovoltaic Solar Cell Protection Schottky Rectifier 文件：81.46 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：102.63 Kbytes Page：2 Pages | HY 虹扬科技 | | ||
Surface Mount Schottky Barrier Recitifiers 文件：338.21 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
Surface Mount Schottky Barrier Recitifiers 文件：375.66 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
Surface Mount Schottky Barrier Recitifiers 文件：391.07 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：35.65 Kbytes Page：2 Pages | HY 虹扬科技 | |
V10P45产品属性
- 类型
描述
- 型号
V10P45
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
TO-277 |
98000 |
原装现货假一罚十 |
|||
VISHAY/威世 |
24+ |
66500 |
只做全新原装进口现货 |
||||
VISHAY/威世 |
24+ |
TO-277 |
54000 |
郑重承诺只做原装进口现货 |
|||
VISHAY |
23+ |
TO-277 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY/威世 |
25+ |
TO-277A(SMPC) |
48198 |
VISHAY/威世全新特价V10P45-M3/86A即刻询购立享优惠#长期有货 |
|||
VISHAY |
23+ |
SMD |
50000 |
只做原装正品 |
|||
VISHAY |
24+ |
TO77A |
11000 |
原装正品 有挂有货 假一赔十 |
|||
VISHAY |
2025+ |
TO-277A(SMPC) |
7695 |
全新原厂原装产品、公司现货销售 |
|||
VISHAY(威世) |
24+ |
TO-277 |
6120 |
百分百原装正品,可原型号开票 |
|||
VISHAY |
25+23+ |
TO-277A(SMPC) |
21531 |
绝对原装正品全新进口深圳现货 |
V10P45规格书下载地址
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V10P45数据表相关新闻
V23047-A1024-A511
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2023-4-7UZ1086G-SOT223R-AD-TG_UTC代理商
UZ1086G-SOT223R-AD-TG_UTC代理商
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2021-10-20V15PM15-M3/H
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2020-11-20V23079-A1006-B201
V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31
DdatasheetPDF页码索引
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