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V10P45价格
参考价格：￥1.8992
型号：V10P45-M3/86A 品牌：Vishay 备注：这里有V10P45多少钱，2024年最近7天走势，今日出价，今日竞价，V10P45批发/采购报价，V10P45行情走势销售排行榜，V10P45报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
V10P45 | HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier HighCurrentDensitySurfaceMount TrenchMOSBarrierSchottkyRectifier UltraLowVF=0.34VatIF=5A FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyop | VishayVishay Siliconix 威世科技 |  |   |
V10P45 | HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier HighCurrentDensitySurfaceMount TrenchMOSBarrierSchottkyRectifier UltraLowVF=0.34VatIF=5A FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyop | VishayVishay Siliconix 威世科技 | | |
V10P45 | HighCurrentDensitySurfaceMountTMBS짰(TrenchMOSBarrierSchottky)Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技 | | |
HighCurrentDensitySurfaceMountTMBS짰(TrenchMOSBarrierSchottky)Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier HighCurrentDensitySurfaceMount TrenchMOSBarrierSchottkyRectifier UltraLowVF=0.34VatIF=5A FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyop | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier HighCurrentDensitySurfaceMount TrenchMOSBarrierSchottkyRectifier UltraLowVF=0.34VatIF=5A FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyop | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier HighCurrentDensitySurfaceMount TrenchMOSBarrierSchottkyRectifier UltraLowVF=0.34VatIF=5A FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyop | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier HighCurrentDensitySurfaceMount TrenchMOSBarrierSchottkyRectifier UltraLowVF=0.34VatIF=5A FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyop | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier HighCurrentDensitySurfaceMount TrenchMOSBarrierSchottkyRectifier UltraLowVF=0.34VatIF=5A FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyop | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier HighCurrentDensitySurfaceMount TrenchMOSBarrierSchottkyRectifier UltraLowVF=0.34VatIF=5A FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyop | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier HighCurrentDensitySurfaceMount TrenchMOSBarrierSchottkyRectifier UltraLowVF=0.34VatIF=5A FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyop | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier HighCurrentDensitySurfaceMount TrenchMOSBarrierSchottkyRectifier UltraLowVF=0.34VatIF=5A FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyop | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier HighCurrentDensitySurfaceMount TrenchMOSBarrierSchottkyRectifier UltraLowVF=0.34VatIF=5A FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyop | VishayVishay Siliconix 威世科技 | | | |
SMDPhotovoltaicSolarCellProtectionSchottkyRectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •ComplianttoRoHSDirective2002/9 | VishayVishay Siliconix 威世科技 | | | |
Lowforwardvoltagedrop,lowpowerlosses FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •ComplianttoRoHSDirective2002/9 | VishayVishay Siliconix 威世科技 | | | |
SMDPhotovoltaicSolarCellProtectionTMBS짰(TrenchMOSBarrierSchottky)Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi | VishayVishay Siliconix 威世科技 | | | |
SMDPhotovoltaicSolarCellProtectionTMBS짰(TrenchMOSBarrierSchottky)Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi | VishayVishay Siliconix 威世科技 | | | |
SMDPhotovoltaicSolarCellProtectionSchottkyRectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •ComplianttoRoHSDirective2002/9 | VishayVishay Siliconix 威世科技 | | | |
SMDPhotovoltaicSolarCellProtectionSchottkyRectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •ComplianttoRoHSDirective2002/9 | VishayVishay Siliconix 威世科技 | | | |
封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR） 描述：DIODE SCHOTTKY 45V 10A TO277A 分立半导体产品 二极管 - 整流器 - 单 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division |  | | |
封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 45V 4.4A TO277A 分立半导体产品 二极管 - 整流器 - 单 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier 文件：84.39 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
SMDPhotovoltaicSolarCellProtectionSchottkyRectifier 文件：86.82 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
SMDPhotovoltaicSolarCellProtectionSchottkyRectifier 文件：81.46 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS 文件：102.63 Kbytes Page：2 Pages | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 |  | | |
SurfaceMountSchottkyBarrierRecitifiers 文件：338.21 Kbytes Page：3 Pages | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | | | |
SurfaceMountSchottkyBarrierRecitifiers 文件：375.66 Kbytes Page：3 Pages | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | | | |
SurfaceMountSchottkyBarrierRecitifiers 文件：391.07 Kbytes Page：3 Pages | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | | | |
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS 文件：35.65 Kbytes Page：2 Pages | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | | |
V10P45产品属性
- 类型
描述
- 型号
V10P45
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
19+ |
TO-277A(SMPC) |
16000 |
||||
VISHAY |
23+ |
TO-277A(SMPC) |
6000 |
原装正品，支持实单 |
|||
VISHAY/威世 |
21+ |
2019PB |
880000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
22+ |
TO-227A |
18000 |
只做全新原装,支持BOM配单,假一罚十 |
|||
VISHAY |
18+ |
TO-277A |
3100 |
全新原装 实单必成 |
|||
Vishay General Semiconductor - |
24+ |
TO-277A(SMPC) |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
|||
VISHAY/威世 |
22+ |
TO-277A |
21000 |
原厂原包装。假一罚十。可开13%增值税发票。 |
|||
VISHAY/威世 |
22+ |
10200 |
只做原装进口 免费送样!! |
||||
VISHAY/威世 |
TO277A(SMPC) |
7906200 |
|||||
VISHAY/威世 |
新年份 |
TO-277A(SMPC) |
28000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
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V10P45规格书下载地址
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V10P45数据表相关新闻
V23047-A1024-A511
V23047-A1024-A511
2023-4-7UZ1086G-SOT223R-AD-TG_UTC代理商
UZ1086G-SOT223R-AD-TG_UTC代理商
2023-3-14UXN40M7K
UXN40M7K
2021-10-20UXN40M7K
UXN40M7K
2021-10-20V15PM15-M3/H
V15PM15-M3/H
2020-11-20V23079-A1006-B201
V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31
DdatasheetPDF页码索引
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