| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
S10P45 | 萧特基二极管 TO-277A/IF:10A/ Vol:45V/ VF@IF:10A=>0.57V/ Tj:-55 to +150℃/ | HY 虹扬科技 |   | |
S10P45 | Surface Mount Schottky Barrier Recitifiers 文件：338.21 Kbytes Page：3 Pages | HY 虹扬科技 | | |
S10P45 | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：102.63 Kbytes Page：2 Pages | HY 虹扬科技 | | |
萧特基二极管 TO-277A/IF:10A/ Vol:45V/ VF@IF:10A=>0.45V/ Tj:-55~150℃/ | HY 虹扬科技 | | ||
Surface Mount Schottky Barrier Recitifiers 文件：338.21 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
Surface Mount Schottky Barrier Recitifiers 文件：375.66 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：136.64 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：35.65 Kbytes Page：2 Pages | HY 虹扬科技 | | ||
Surface Mount Schottky Barrier Recitifiers 文件：391.07 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：136.73 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
Surface Mount Schottky Barrier Recitifiers 文件：391.07 Kbytes Page：3 Pages | HY 虹扬科技 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Ultra-Small Surface Mount Package • Low Forward Voltage Drop • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection • Lead Free/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 4 and 5) | DIODES 美台半导体 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Ultra-Small Surface Mount Package • Low Forward Voltage Drop • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection • Lead Free/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 4 and 5) | DIODES 美台半导体 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SMD Photovoltaic Solar Cell Protection Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/9 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE 文件：79.53 Kbytes Page：3 Pages | DIODES 美台半导体 | |
S10P45产品属性
- 类型
描述
- VRRM(V)：
45
- IO(A)：
10.0
- IFSM(A)：
180
- VF(V)：
0.57
- IR(uA)：
800
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYElectronicCorp |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
1906 |
原装现货 |
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