3W 7.5V 10% Zener Diode

This Zener Diode is packaged in DIGI A, which has a power dissipation of 3W.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

POWER ZENERS 3WATT

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封装/外壳：A，轴向 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)