位置:首页 > IC中文资料第3763页 > UZ770
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UZ770 | POWER ZENERS DESCRIPTION Fused-in-glass metallurgically bonded 3 watt zener diodes. FEATURES • 10 Times Greater Surge Rating than Conventional 1Watt Types • Small Phsical Size | MICROSEMI 美高森美 | ||
UZ770 | 3W 70V 5% Zener Diode This Zener Diode is packaged in DIGI A, which has a power dissipation of 3W.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish. | DIGITRON | ||
UZ770 | 封装/外壳:A,轴向 包装:卷带(TR) 描述:VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | MICROCHIP 微芯科技 | ||
UZ770 | POWER ZENERS 3WATT 文件:245.75 Kbytes Page:3 Pages | DIGITRON | ||
UZ770 | POWER ZENERS 3 Watt 文件:120.89 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
POWER ZENERS DESCRIPTION Fused-in-glass, metallurgically bonded 6 watt leaded zeners and 10 watt stud-type- zeners. FEATURES ● High Surge Rating ● Small Physical Size ● Leaded and Stud Packages Available | MICROSEMI 美高森美 | |||
POWER ZENERS DESCRIPTION Fused-in-glass, metallurgically bonded 6 watt leaded zeners and 10 watt stud-type- zeners. FEATURES ● High Surge Rating ● Small Physical Size ● Leaded and Stud Packages Available | MICROSEMI 美高森美 | |||
POWER ZENERS DESCRIPTION Fused-in-glass, metallurgically bonded 6 watt leaded zeners and 10 watt stud-type- zeners. FEATURES ● High Surge Rating ● Small Physical Size ● Leaded and Stud Packages Available | MICROSEMI 美高森美 | |||
POWER ZENERS DESCRIPTION Fused-in-glass, metallurgically bonded 6 watt leaded zeners and 10 watt stud-type- zeners. FEATURES ● High Surge Rating ● Small Physical Size ● Leaded and Stud Packages Available | MICROSEMI 美高森美 | |||
POWER ZENERS DESCRIPTION Fused-in-glass metallurgically bonded 3 watt zener diodes. FEATURES • 10 Times Greater Surge Rating than Conventional 1Watt Types • Small Phsical Size | MICROSEMI 美高森美 | |||
POWER ZENERS 6 Watt, Military, 10 Watt Military 文件:131.36 Kbytes Page:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
6 WATT POWER ZENERS 文件:117.91 Kbytes Page:2 Pages | DIGITRON | |||
Zener Voltage Regulator Diode | MICROCHIP 微芯科技 | |||
POWER ZENERS 6 Watt, Military, 10 Watt Military 文件:131.36 Kbytes Page:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
封装/外壳:接线柱 包装:散装 描述:VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | MICROCHIP 微芯科技 | |||
Zener Voltage Regulator Diode | MICROCHIP 微芯科技 | |||
6 WATT POWER ZENERS 文件:117.91 Kbytes Page:2 Pages | DIGITRON | |||
6 WATT POWER ZENERS 文件:117.91 Kbytes Page:2 Pages | DIGITRON | |||
POWER ZENERS 6 Watt, Military, 10 Watt Military 文件:131.36 Kbytes Page:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
POWER ZENERS 6 Watt, Military, 10 Watt Military 文件:131.36 Kbytes Page:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
6 WATT POWER ZENERS 文件:117.91 Kbytes Page:2 Pages | DIGITRON | |||
RECTIFIER DIODE RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 3870 A Surge current 50 kA | POSEICO | |||
RECTIFIER DIODE RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 4230 A Surge current 50 kA | POSEICO | |||
NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions | POINN | |||
NPN SILICON POWER TRANSISTOR NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 850 Volt Blocking Capability ● 50 W at 25°C Case Temperature | POINN | |||
QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. Th | STMICROELECTRONICS 意法半导体 |
UZ770产品属性
- 类型
描述
- 型号
UZ770
- 制造商
Microsemi Corporation
- 功能描述
ZENER SGL 70V 5% 3W 2PIN BODY A - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
26+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
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2019-8-31
DdatasheetPDF页码索引
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