P-Channel 30-V (D-S) MOSFET

文件：1.68707 Mbytes Page：8 Pages

P-CHANNEL ENHANCEMENT MODE

文件：255.69 Kbytes Page：5 Pages

P-CHANNEL ENHANCEMENT MODE

文件：255.69 Kbytes Page：5 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.68712 Mbytes Page：8 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.68712 Mbytes Page：8 Pages

P-CHANNEL ENHANCEMENT MODE

文件：255.69 Kbytes Page：5 Pages

丝印代码：9435TFCYWP；SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages

20V P-Channel Increased MOS FET

文件：299.94 Kbytes Page：2 Pages

P-Channel 30-V (D-S) MOSFET

文件：972.94 Kbytes Page：8 Pages