Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int

256K(32K x8, Chip Erase)FLASH MEMORY

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F256 is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The Am28F256 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be repr

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

GENERAL DESCRIPTION The Am28F256A is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F256A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be r

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F256 is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The Am28F256 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be repr