位置:首页 > IC中文资料第6250页 > 28F256
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
28F256 | 512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int | STMICROELECTRONICS 意法半导体 | ||
28F256 | 256K(32K x8, Chip Erase)FLASH MEMORY
| STMICROELECTRONICS 意法半导体 | ||
28F256 | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory GENERAL DESCRIPTION The Am28F256 is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The Am28F256 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be repr | AMD 超威半导体 | ||
28F256 | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms GENERAL DESCRIPTION The Am28F256A is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F256A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be r | AMD 超威半导体 | ||
28F256 | 512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory | STMICROELECTRONICS 意法半导体 | ||
StrataFlash Wireless Memory The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M | Intel 英特尔 | |||
StrataFlash Wireless Memory The Numonyx™ StrataFlash® Wireless Memory (L18) provides read-while-write and read-while-erase capability with density upgrades through 256-Mbit. This family of devices provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and | NUMONYX | |||
StrataFlash짰 Wireless Memory ■ High performance Read-While-Write/Erase — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable WAIT configuration — Bu | NUMONYX | |||
1.8 Volt Intel StrataFlash짰 Wireless Memory with 3.0-Volt I/O (L30) The 1.8 Volt Intel StrataFlash® wireless memory with 3-Volt I/O product is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 volt low-volta | Intel 英特尔 | |||
Numonyx™ StrataFlash Wireless Memory (L18) | Micron 美光 | |||
Numonyx™ StrataFlash® Wireless Memory(L30) | Micron 美光 | |||
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory GENERAL DESCRIPTION The Am28F256 is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The Am28F256 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be repr | AMD 超威半导体 |
28F256产品属性
- 类型
描述
- 型号
28F256
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
512 Kbit(64Kb x8 Bulk Erase)Flasxh Memory
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
BGA |
20000 |
全新原装假一赔十 |
|||
INTEL |
24+ |
BGA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INTEL/英特尔 |
25+ |
BGA |
996880 |
只做原装,欢迎来电资询 |
|||
INTEL |
24+ |
BGA |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
INTEL |
25+23+ |
BGA |
36824 |
绝对原装正品全新进口深圳现货 |
|||
INTEL |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
TNTEL |
24+ |
BGA |
153 |
||||
INTEL |
BGA |
800 |
正品原装--自家现货-实单可谈 |
||||
Intel |
6 |
公司优势库存 热卖中!! |
|||||
INTEL/英特尔 |
2406+ |
BGA |
1850 |
诚信经营!进口原装!量大价优! |
28F256规格书下载地址
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28F256数据表相关新闻
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DdatasheetPDF页码索引
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