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型号 功能描述 生产厂家 企业 LOGO 操作
28F256

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F256 is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The Am28F256 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be repr

AMD

超威半导体

28F256

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

GENERAL DESCRIPTION The Am28F256A is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F256A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be r

AMD

超威半导体

28F256

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int

STMICROELECTRONICS

意法半导体

28F256

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICS

意法半导体

28F256

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

STMICROELECTRONICS

意法半导体

StrataFlash Wireless Memory

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M

INTEL

英特尔

StrataFlash Wireless Memory

The Numonyx™ StrataFlash® Wireless Memory (L18) provides read-while-write and read-while-erase capability with density upgrades through 256-Mbit. This family of devices provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and

NUMONYX

Numonyx™ StrataFlash Wireless Memory (L18)

The Numonyx™ StrataFlash® Wireless Memory (L18) provides read-while-write and read-while-erase capability with density upgrades through 256-Mbit. This family of devices provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and d

MICRON

美光

StrataFlash짰 Wireless Memory

■ High performance Read-While-Write/Erase — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable WAIT configuration — Bu

NUMONYX

1.8 Volt Intel StrataFlash짰 Wireless Memory with 3.0-Volt I/O (L30)

The 1.8 Volt Intel StrataFlash® wireless memory with 3-Volt I/O product is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 volt low-volta

INTEL

英特尔

Numonyx™ StrataFlash® Wireless Memory(L30)

■ High performance Read-While-Write/Erase\n  — 85 ns initial access\n  — 52 MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode\n  — 25 ns asynchronous-page mode\n  — 4-, 8-, 16-, and continuous-word burst mode\n  — Burst suspend\n  — Programmable WAIT configuration\n  — Buff

MICRON

美光

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F256 is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The Am28F256 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be repr

AMD

超威半导体

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

GENERAL DESCRIPTION The Am28F256A is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F256A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be r

AMD

超威半导体

28F256产品属性

  • 类型

    描述

  • 型号

    28F256

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    512 Kbit(64Kb x8 Bulk Erase)Flasxh Memory

更新时间:2026-5-25 11:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NULL
23+
DIP32
8650
受权代理!全新原装现货特价热卖!
INTEL
BGA
3350
一级代理 原装正品假一罚十价格优势长期供货
INTEL
2138+
BGA
8960
专营BGA,QFP原装现货,假一赔十
INTEL
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
INTEL
25+
BGA
2860
原厂原装正品价格优惠公司现货欢迎查询
N/A
24+
PLCC
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
VISHAY
26+
DIP
19567
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
INTEL
24+
BGA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INTEL/英特尔
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
INTEL
2023+
BGA
58000
进口原装,现货热卖

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