型号 功能描述 生产厂家 企业 LOGO 操作
UT10

10-foot Instrumentation Tower

文件:395.63 Kbytes Page:2 Pages

CAMPBELL

100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

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友顺

100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

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友顺

100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

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友顺

100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

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友顺

100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

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友顺

100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

UTC

友顺

100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

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友顺

100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

UTC

友顺

100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

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友顺

Thicker Film Tubular type Non-Inductive Resistors for Ultra High Voltage, High Energy

文件:864.54 Kbytes Page:2 Pages

WILLOW

Ultra Voltage, High Frequncy Pulse, R&R-c Tank, High Energy.

文件:158.2 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2 CHANNEL LOW-DROPOUT VOLTAGE REGULATOR

文件:222.28 Kbytes Page:6 Pages

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2 CHANNEL LOW-DROPOUT VOLTAGE REGULATOR

文件:222.28 Kbytes Page:6 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL POWER MOSFET

文件:302.16 Kbytes Page:7 Pages

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100A, 30V N-CHANNEL POWER MOSFET

文件:275.74 Kbytes Page:5 Pages

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100A, 30V N-CHANNEL POWER MOSFET

文件:275.74 Kbytes Page:5 Pages

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100A, 30V N-CHANNEL POWER MOSFET

文件:275.74 Kbytes Page:5 Pages

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N-CHANNEL POWER MOSFET

文件:302.16 Kbytes Page:7 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL POWER MOSFET

文件:302.16 Kbytes Page:7 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL POWER MOSFET

文件:302.16 Kbytes Page:7 Pages

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N-Channel 30-V (D-S) MOSFET

文件:961.83 Kbytes Page:7 Pages

VBSEMI

微碧半导体

100A, 30V N-CHANNEL POWER MOSFET

文件:275.74 Kbytes Page:5 Pages

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100A, 30V N-CHANNEL POWER MOSFET

文件:275.74 Kbytes Page:5 Pages

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100A, 30V N-CHANNEL POWER MOSFET

文件:275.74 Kbytes Page:5 Pages

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N-CHANNEL POWER MOSFET

文件:302.16 Kbytes Page:7 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL POWER MOSFET

文件:302.16 Kbytes Page:7 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件:364.35 Kbytes Page:8 Pages

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N-CHANNEL POWER MOSFET

文件:302.16 Kbytes Page:7 Pages

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100A, 30V N-CHANNEL POWER MOSFET

文件:275.74 Kbytes Page:5 Pages

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100A, 30V   N-CHANNEL  POWER MOSFET

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N-CHANNEL POWER MOSFET

文件:302.16 Kbytes Page:7 Pages

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Ultrahigh Threshold Voltage Depletion-Mode Power MOSFET

ETC

知名厂家

THREE-TERMINAL LOW POWER VOLTAGE REGULATORS

文件:258 Kbytes Page:10 Pages

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THREE-TERMINAL LOW POWER VOLTAGE REGULATORS

文件:258 Kbytes Page:10 Pages

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万用表

ETC

知名厂家

30V, 108A N-CHANNEL POWER MOSFET

文件:185.88 Kbytes Page:3 Pages

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N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

文件:194.51 Kbytes Page:4 Pages

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30V, 108A N-CHANNEL POWER MOSFET

文件:185.88 Kbytes Page:3 Pages

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N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

文件:194.51 Kbytes Page:4 Pages

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30V, 108A N-CHANNEL POWER MOSFET

文件:185.88 Kbytes Page:3 Pages

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N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

文件:194.51 Kbytes Page:4 Pages

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友顺

30V, 108A N-CHANNEL POWER MOSFET

文件:185.88 Kbytes Page:3 Pages

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N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

文件:194.51 Kbytes Page:4 Pages

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30V, 108A N-CHANNEL POWER MOSFET

文件:185.88 Kbytes Page:3 Pages

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友顺

UT10产品属性

  • 类型

    描述

  • 型号

    UT10

  • 制造商

    WILLOW

  • 制造商全称

    Willow Technologies Ltd

  • 功能描述

    Thicker Film Tubular type Non-Inductive Resistors for Ultra High Voltage, High Energy

更新时间:2025-12-27 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTMC
25+
47
公司优势库存 热卖中!!
UTC
25+
TO-92
18000
原厂直接发货进口原装
UTC
25+
SOT-89
2987
只售原装自家现货!诚信经营!欢迎来电!
UTC
2016+
TO252
3856
只做原装,假一罚十,公司可开17%增值税发票!
UTC
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
UMEC
24+
SOP6
6000
原装房间现货可出样品
UNIVERSALMICROELECTRONIC
124
全新原装 货期两周
UTC
1932+
TO-220
377
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC
23+
TO-92
5000
原装正品,假一罚十
UTC/友顺
25+
TO-220
1489
全新原装正品支持含税

UT10数据表相关新闻