位置：首页 > IC中文资料第5459页 > UT100N03
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UT100N03 | 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V | UTC 友顺 |   | |
UT100N03 | 100A, 30V N-CHANNEL POWER MOSFET | UTC 友顺 | | |
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：302.16 Kbytes Page：7 Pages | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET 文件：275.74 Kbytes Page：5 Pages | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET 文件：275.74 Kbytes Page：5 Pages | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET 文件：275.74 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：302.16 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：302.16 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：302.16 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel 30-V (D-S) MOSFET 文件：961.83 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
100A, 30V N-CHANNEL POWER MOSFET 文件：275.74 Kbytes Page：5 Pages | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET 文件：275.74 Kbytes Page：5 Pages | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET 文件：275.74 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：302.16 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：302.16 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：364.35 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：302.16 Kbytes Page：7 Pages | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET 文件：275.74 Kbytes Page：5 Pages | UTC 友顺 | | ||
100A, 30V N-CHANNEL POWER MOSFET | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：302.16 Kbytes Page：7 Pages | UTC 友顺 | | ||
Rectifier Diodes FEATURES High density cell design for ultra low Rps(on) ® Excellent package for good heat dissipation Fully characterized Avalanche voltage and current ® Special process technology for high ESD capability Good stability and uniformity with high Eas Excellent package for good heat dissipation | EVVOSEMI 翊欧 | | ||
N-Channel Enhancement Mode Power MOSFET Featurese 30V, 100A Rosow 3.88mQ@Ves = 10V (Typ) «Advanced Trench Technology + Provide Excellent Rosco and Low Gate Charge « Lead free product is acquired | TECHPUBLIC 台舟电子 | | ||
30V N-Channel Power Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances | UMW 友台半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.62203 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
90A竊?0V N-CHANNEL MOSFET 文件：212.13 Kbytes Page：5 Pages | KIA 可易亚半导体 | |
UT100N03产品属性
- 类型
描述
- 型号
UT100N03
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
100A, 30V N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
25+ |
TO-220 |
51848 |
百分百原装现货 实单必成 欢迎询价 |
|||
UTC |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
UTC/友顺 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
UTC/友顺 |
25+ |
TO-220 |
880000 |
明嘉莱只做原装正品现货 |
|||
UTC/友顺 |
20+ |
TO-220 |
7500 |
现货很近!原厂很远!只做原装 |
|||
VBsemi(台湾微碧) |
2447 |
TO220 |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
UTC/友顺 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
UTC/友顺 |
24+ |
TO-251 |
50000 |
全新原装,一手货源,全场热卖! |
|||
UTC/友顺 |
2022+ |
TO-220 |
7500 |
原厂代理 终端免费提供样品 |
UT100N03规格书下载地址
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UT100N03数据表相关新闻
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深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
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深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
2019-11-18USLS00-30-C原装现货
深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729。
2019-11-8
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