型号 功能描述 生产厂家 企业 LOGO 操作
UPG2015TB

NECs 1W SINGLE CONTROL L, S-BAND SPDT SWITCH

DESCRIPTION The µPG2015TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation. This device is house

NEC

瑞萨

UPG2015TB

1W SINGLE CONTROL L, S-BAND SPDT SWITCH

DESCRIPTION NECs UPG2015TB is a single control single control GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L, S-band applications. This device can operate frequency from 0.5 to 2.5 GHz, with low insertion loss and high isolation. This device is housed in a 6-p

CEL

UPG2015TB

GaAs INTEGRATED CIRCUIT

FEATURES • Supply voltage : VDD = 2.7 to 3.0 V (2.8 V TYP.) • Switch control voltage : Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • Low insertion loss : LINS1 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : LINS2 = 0.30 dB TYP. @ f = 1.

RENESAS

瑞萨

UPG2015TB

L, S-BAND SPDT SWITCH

文件:110.78 Kbytes Page:11 Pages

NEC

瑞萨

UPG2015TB

NECs 1W SINGLE CONTROL L, S-BAND SPDT SWITCH

RENESAS

瑞萨

丝印代码:G3J;GaAs INTEGRATED CIRCUIT

FEATURES • Supply voltage : VDD = 2.7 to 3.0 V (2.8 V TYP.) • Switch control voltage : Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • Low insertion loss : LINS1 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V : LINS2 = 0.30 dB TYP. @ f = 1.

RENESAS

瑞萨

NECs 1W SINGLE CONTROL L, S-BAND SPDT SWITCH

DESCRIPTION The µPG2015TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation. This device is house

NEC

瑞萨

1W SINGLE CONTROL L, S-BAND SPDT SWITCH

DESCRIPTION NECs UPG2015TB is a single control single control GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L, S-band applications. This device can operate frequency from 0.5 to 2.5 GHz, with low insertion loss and high isolation. This device is housed in a 6-p

CEL

L, S-BAND SPDT SWITCH

文件:110.78 Kbytes Page:11 Pages

NEC

瑞萨

封装/外壳:6-TSSOP,SC-88,SOT-363 包装:卷带(TR) 描述:IC RF SWITCH SPDT 2.5GHZ 6-SMINI RF/IF,射频/中频和 RFID 射频开关

CEL

L, S-BAND SPDT SWITCH

文件:110.78 Kbytes Page:11 Pages

NEC

瑞萨

封装/外壳:6-TSSOP,SC-88,SOT-363 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC RF SWITCH SPDT 2.5GHZ 6-SMINI RF/IF,射频/中频和 RFID 射频开关

CEL

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package. FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold m

PHILIPS

飞利浦

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

NTE

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

TECCOR

POWER RECTIFIERS(20A,50-200V)

Switchmode Full Plastic Dual Ultrafast Power Rectifiers ... Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ✱ High Surge Capacity ✱ Low Power Loss, High Efficiency ✱ Glass Passivated chip junction

MOSPEC

统懋

UPG2015TB产品属性

  • 类型

    描述

  • 型号

    UPG2015TB

  • 功能描述

    RF 开关 IC RO 551-UPG2015TB-A

  • RoHS

  • 制造商

    M/A-COM Technology Solutions

  • 开关数量

    Single

  • 开关配置

    SPDT

  • 介入损耗

    0.6 dB

  • 截止隔离(典型值)

    43 dB

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PQFN-16

  • 封装

    Reel

更新时间:2026-3-14 18:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
SOT-363
50000
原装正品 支持实单
RENASAS
22+
SOT363
20000
公司只做原装 品质保证
CEL
24+
原厂原封
1000
原装正品
RENESAS/瑞萨
25+
SOT-363
880000
明嘉莱只做原装正品现货
NEC
23+
原厂封装
13528
振宏微原装正品,假一罚百
CEL
22+
6SuperMiniMold
9000
原厂渠道,现货配单
RENESAS/瑞萨
2450+
SOT363
6540
只做原装正品假一赔十为客户做到零风险!!
NEC
24+
SOT-363
37279
郑重承诺只做原装进口现货
RENASAS
2511
SOT-363
3170
电子元器件采购降本30%!原厂直采,砍掉中间差价
NEC
24+
SOT-363
9600
原装现货,优势供应,支持实单!

UPG2015TB数据表相关新闻