NECs L, S-BAND 4W SPDT SWITCH

DESCRIPTION The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high isolation by 2.8 V control voltage. FEATURES

L, S-Band HIGH POWER SPDT SWITCH

DESCRIPTION NECs UPG2009TB is a L, S-band SPDT (Single Pole Double Throw) GaAs FET switch for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high isolation. FEATURES • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1

GaAs INTEGRATED CIRCUIT

FEATURES • Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz • High isolation : ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz • High power : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz

GaAs INTEGRATED CIRCUIT

FEATURES • Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz • High isolation : ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz • High power : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz

NECs L, S-BAND 4W SPDT SWITCH

DESCRIPTION The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high isolation by 2.8 V control voltage. FEATURES

L, S-Band HIGH POWER SPDT SWITCH

DESCRIPTION NECs UPG2009TB is a L, S-band SPDT (Single Pole Double Throw) GaAs FET switch for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high isolation. FEATURES • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1

L-BAND HIGH POWER SPDT SWITCH

文件：86.16 Kbytes Page：10 Pages

NECs L, S-BAND 4W SPDT SWITCH

L-BAND HIGH POWER SPDT SWITCH

文件：1.28809 Mbytes Page：9 Pages

L-BAND HIGH POWER SPDT SWITCH

文件：86.16 Kbytes Page：10 Pages

L-BAND HIGH POWER SPDT SWITCH

文件：86.16 Kbytes Page：10 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：IC RF SWITCH SPDT 2.5GHZ 6-SMINI RF/IF，射频/中频和 RFID 射频开关

包装：盒 描述：EVAL BOARD FOR UPG2009TB 开发板，套件，编程器 射频评估和开发套件，开发板

Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ INTEGRATED FREE

Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)

文件：93.36 Kbytes Page：8 Pages

Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)

文件：93.36 Kbytes Page：8 Pages

Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)

文件：93.36 Kbytes Page：8 Pages